Infineon Technologies_IRFR13N20DTRPBF
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Infineon Technologies
IRFR13N20DTRPBF

278-IRFR13N20DTRPBF
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MOSFET N-CH 200V 13A DPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
TO-252AA (DPAK)
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
110W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IRFR13N20DTRPBF Description

IRFR13N20DTRPBF Description

The IRFR13N20DTRPBF is a high-performance MOSFET N-CH 200V 13A DPAK from Infineon Technologies. This single FET is designed for applications requiring high power dissipation and efficient switching. With a maximum drain-to-source voltage of 200V and a continuous drain current of 13A at 25°C, the IRFR13N20DTRPBF delivers excellent performance in demanding electronic systems.

IRFR13N20DTRPBF Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and fast switching capabilities.
  • Drain to Source Voltage (Vdss): 200V - Suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc) - Capable of handling high current loads.
  • Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V - Offers low on-resistance for efficient power delivery.
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10V - Minimizes switching losses.
  • Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V - Reduces parasitic capacitance and improves high-frequency performance.
  • Vgs (Max): ±30V - Provides robust gate drive capability.
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA - Ensures reliable threshold voltage performance.
  • Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) designs.
  • Package: Tape & Reel (TR) - Ideal for automated assembly processes.

IRFR13N20DTRPBF Applications

The IRFR13N20DTRPBF is ideal for applications that require high power dissipation, efficient switching, and robust performance. Some specific use cases include:

  1. Power Supplies: The high drain current and low on-resistance make it suitable for power supply designs, where efficient power delivery is critical.
  2. Motor Control: The IRFR13N20DTRPBF's high voltage and current ratings make it an excellent choice for motor control applications, providing reliable performance in demanding environments.
  3. Industrial Automation: Its ability to handle high power dissipation and switching speeds make it suitable for industrial automation systems, where reliability and performance are paramount.

Conclusion of IRFR13N20DTRPBF

The IRFR13N20DTRPBF is a high-performance MOSFET N-CH 200V 13A DPAK from Infineon Technologies, offering excellent technical specifications and performance benefits. Its unique features, such as low on-resistance, high voltage and current ratings, and robust gate drive capability, make it an ideal choice for high-power applications like power supplies, motor control, and industrial automation. Despite being classified as obsolete, its performance and reliability make it a valuable option for existing designs and applications where high power dissipation and efficient switching are required.

FAQ

What is IRFR13N20DTRPBF?
IRFR13N20DTRPBF is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
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