Infineon Technologies_IRFR3410PBF
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Infineon Technologies
IRFR3410PBF

278-IRFR3410PBF
PDF Datasheet
MOSFET N-CH 100V 31A DPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
TO-252AA (DPAK)
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
3W (Ta), 110W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IRFR3410PBF Description

IRFR3410PBF Description

The IRFR3410PBF from Infineon Technologies is a N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 100V drain-to-source voltage (Vdss) and 31A continuous drain current (Id), this surface-mount device offers robust performance in a compact DPAK package. Its low on-resistance (Rds(on)) of 39mΩ at 10V Vgs ensures minimal conduction losses, making it ideal for power management circuits. The MOSFET operates with a gate threshold voltage (Vgs(th)) of up to 4V and supports a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in drive circuit design.

IRFR3410PBF Features

  • High Power Handling: Supports 110W power dissipation (Tc) and 3W (Ta), enabling reliable operation under high thermal stress.
  • Fast Switching: Low gate charge (Qg) of 56nC @ 10V and input capacitance (Ciss) of 1690pF @ 25V ensure efficient high-frequency switching.
  • Robust Construction: ROHS3 compliant and REACH unaffected, meeting stringent environmental and safety standards.
  • Wide Drive Voltage Range: Optimized for 10V drive voltage, balancing performance and power efficiency.
  • Surface-Mount Design: DPAK package facilitates easy PCB integration in space-constrained applications.

IRFR3410PBF Applications

  • DC-DC Converters: Ideal for synchronous rectification and step-down/step-up topologies due to low Rds(on).
  • Motor Control: Suitable for H-bridge and PWM-driven motor drives in industrial automation.
  • Power Supplies: Efficiently handles SMPS (Switched-Mode Power Supply) designs, including server and telecom PSUs.
  • Battery Management: Used in battery protection circuits and load switches for its high current capability.
  • Automotive Systems: Applicable in 12V/24V automotive power distribution and LED drivers.

Conclusion of IRFR3410PBF

The IRFR3410PBF stands out as a high-performance N-channel MOSFET with low conduction losses, fast switching, and thermal resilience, making it a preferred choice for power electronics designers. Its 100V rating, 31A current handling, and compact DPAK package provide a balanced solution for demanding applications in industrial, automotive, and consumer electronics. With Infineon’s HEXFET® technology, this MOSFET ensures reliability and efficiency, outperforming comparable models in its class.

FAQ

What operating temperature range does IRFR3410PBF support?
IRFR3410PBF has an operating temperature range of -55°C ~ 175°C (TJ).
Are there related or alternative parts for IRFR3410PBF?
Is IRFR3410PBF currently in stock?
What voltage specification is listed for IRFR3410PBF?
What is the mounting type of IRFR3410PBF?
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