Infineon Technologies_IRFR3707ZTRPBF

Infineon Technologies
IRFR3707ZTRPBF  
Single FETs, MOSFETs

IRFR3707ZTRPBF
278-IRFR3707ZTRPBF
Ersa
Infineon Technologies-IRFR3707ZTRPBF-datasheets-5620315.pdf
MOSFET N-CH 30V 56A DPAK
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    IRFR3707ZTRPBF Description

    IRFR3707ZTRPBF Description

    The IRFR3707ZTRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high power dissipation and efficient switching. With a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 56A at 25°C, this MOSFET is ideal for high-power applications. It features a low on-resistance (Rds On) of 9.5mOhm at 15A and 10V, ensuring efficient power transfer with minimal losses. The IRFR3707ZTRPBF is also designed for surface mount applications, making it suitable for compact and space-constrained designs.

    IRFR3707ZTRPBF Features

    • High Power Dissipation: With a maximum power dissipation of 50W (Tc), the IRFR3707ZTRPBF can handle high power applications with ease.
    • Low On-Resistance: The low Rds On of 9.5mOhm at 15A and 10V ensures efficient power transfer and minimal power losses.
    • High Input Capacitance: The IRFR3707ZTRPBF has an input capacitance (Ciss) of 1150 pF at 15V, which is beneficial for high-speed switching applications.
    • Low Gate Charge: The maximum gate charge (Qg) of 14 nC at 4.5V reduces switching losses and improves efficiency.
    • Robust Operating Voltage: The IRFR3707ZTRPBF operates with a maximum gate-source voltage (Vgs) of ±20V, providing a wide operating range.
    • Surface Mount Design: The surface mount design allows for compact and space-efficient designs in various applications.

    IRFR3707ZTRPBF Applications

    The IRFR3707ZTRPBF is ideal for a variety of high-power applications, including:

    • Power Supplies: Its high power dissipation and low on-resistance make it suitable for power supply designs.
    • Motor Controls: The IRFR3707ZTRPBF can be used in motor control applications due to its high current handling capabilities.
    • Industrial Automation: Its robust operating voltage and low gate charge make it suitable for industrial automation systems.
    • Automotive Applications: The IRFR3707ZTRPBF can be used in automotive applications, such as electric vehicle charging systems, due to its high power dissipation and low on-resistance.

    Conclusion of IRFR3707ZTRPBF

    The IRFR3707ZTRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, offering high power dissipation, low on-resistance, and a wide operating voltage range. Its unique features, such as low gate charge and high input capacitance, make it ideal for high-speed switching applications. With its surface mount design, the IRFR3707ZTRPBF is suitable for a variety of high-power applications, including power supplies, motor controls, industrial automation, and automotive systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    IRFR3707ZTRPBF Documents

    Download datasheets and manufacturer documentation for IRFR3707ZTRPBF

    Ersa IRFR3707ZPbF, IRFU3707ZPbF      
    Ersa Mult Dev Lot Code Standardization 11/Nov/2022      
    Ersa IR Part Numbering System      
    Ersa IRFR3707ZPbF, IRFU3707ZPbF      
    Ersa IRFR_U3707Z Spice Model      

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