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IRFR4510PBF

IRFR4510PBF Description

The IRFR4510PBF from Infineon Technologies is a high-performance N-channel HEXFET® MOSFET designed for power management applications. With a 100V drain-to-source voltage (Vdss) and 56A continuous drain current (Id), this surface-mount device offers robust performance in a compact DPAK package. Its low on-resistance (Rds(on)) of 13.9mOhm at 38A, 10V ensures minimal conduction losses, while the ±20V gate-source voltage (Vgs) tolerance provides flexibility in drive circuitry. The MOSFET operates efficiently with a gate charge (Qg) of 81nC at 10V, enabling fast switching for high-frequency applications.

IRFR4510PBF Features

• Low Rds(on): 13.9mOhm at 38A, 10V for reduced power dissipation.
• High Current Handling: 56A continuous drain current (Tc) for demanding loads.
• Fast Switching: Optimized gate charge (81nC) and input capacitance (3031pF) for efficient performance.
• Robust Construction: HEXFET® technology ensures reliability and thermal stability.
• Wide Vgs Range: ±20V gate drive compatibility for versatile designs.
• Compliance: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for environmental and handling safety.

IRFR4510PBF Applications

This MOSFET is ideal for:

• Switching Power Supplies: High efficiency and low losses in DC-DC converters.
• Motor Control: Reliable performance in H-bridge and PWM-driven systems.
• Automotive Systems: Suitable for 48V battery management and load switching.
• Industrial Inverters: High-current handling in UPS and solar inverters.
• LED Drivers: Fast switching for high-brightness LED applications.

Conclusion of IRFR4510PBF

The IRFR4510PBF stands out for its low on-resistance, high current capability, and robust HEXFET® design, making it a superior choice for power electronics. Its surface-mount DPAK package ensures space efficiency, while Infineon’s proven technology guarantees reliability in harsh environments. Whether for industrial, automotive, or consumer applications, this MOSFET delivers optimal performance, efficiency, and durability.