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IRFR5410TRLPBF

IRFR5410TRLPBF Description

The IRFR5410TRLPBF is a P-channel HEXFET® power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. With a 100V drain-to-source voltage (Vdss) and 13A continuous drain current (Id), it offers robust performance in power management circuits. Although marked as Obsolete, it remains a reliable choice for legacy designs due to its low on-resistance (Rds(on) of 205mOhm @ 10V) and high power dissipation capability (66W). The device features a surface-mount DPAK package, making it suitable for compact PCB layouts. Its ±20V gate-to-source voltage (Vgs) tolerance and 4V threshold voltage (Vgs(th)) ensure compatibility with a wide range of drive circuits.

IRFR5410TRLPBF Features

• Low Gate Charge (Qg): 58 nC @ 10V minimizes switching losses, enhancing efficiency in high-frequency applications.
• Low Input Capacitance (Ciss): 760 pF @ 25V reduces gate drive requirements, simplifying circuit design.
• HEXFET® Technology: Delivers low conduction losses and high thermal stability.
• RoHS3 Compliant & REACH Unaffected: Meets environmental regulations for global use.
• Tape & Reel (TR) Packaging: Optimized for automated assembly processes.
• Wide Operating Range: Suitable for 10V drive voltage systems, ensuring versatility.

IRFR5410TRLPBF Applications

This MOSFET is ideal for:

• DC-DC Converters: Efficient power conversion in industrial and automotive systems.
• Motor Control: Reliable switching in brushed/brushless motor drives.
• Power Supplies: High-current load switching in SMPS and UPS designs.
• Battery Management: Protection circuits in Li-ion/power tool applications.
• Legacy System Upgrades: Replacement for older P-channel MOSFETs in maintenance scenarios.

Conclusion of IRFR5410TRLPBF

The IRFR5410TRLPBF combines low Rds(on), high current handling, and HEXFET® reliability, making it a strong candidate for power electronics despite its obsolete status. Its efficiency in switching and thermal performance ensures longevity in demanding environments. Engineers seeking a proven P-channel MOSFET for high-voltage, medium-current applications will find this device a cost-effective solution, particularly where automated assembly and compliance with modern standards are critical.