Infineon Technologies Tariff Inquiry

IRFR6215TR

IRFR6215TR Description

The IRFR6215TR from Infineon Technologies is a P-channel HEXFET® MOSFET designed for high-efficiency power management applications. With a 150V drain-to-source voltage (Vdss) and 13A continuous drain current (Id), it offers robust performance in switching circuits. This surface-mount (DPAK) device features a low on-resistance (Rds(on)) of 295mΩ at 10V gate drive, ensuring minimal conduction losses. Although marked as obsolete, its specifications remain competitive, making it suitable for legacy designs or replacements. The ±20V gate-source voltage (Vgs) tolerance and 860pF input capacitance (Ciss) enable stable switching behavior in demanding environments.

IRFR6215TR Features

• High Voltage Handling: 150V Vdss for industrial and automotive applications.
• Low Rds(on): 295mΩ at 10V reduces power dissipation (110W max).
• Fast Switching: Optimized gate charge (Qg: 66nC @ 10V) for high-frequency operation.
• Robust Construction: HEXFET® technology ensures reliability under thermal stress.
• Surface-Mount Package: DPAK (TO-252) for compact PCB designs.
• Wide Vgs Range: ±20V compatibility enhances design flexibility.

IRFR6215TR Applications

• Power Supplies: DC-DC converters, SMPS, and voltage regulation.
• Motor Control: H-bridge circuits and PWM-driven systems.
• Automotive Systems: Load switching and battery management.
• Industrial Equipment: Inverters, relays, and high-side switches.
• Legacy Designs: Replacement for obsolete P-channel MOSFETs.

Conclusion of IRFR6215TR

The IRFR6215TR is a high-performance P-channel MOSFET offering low conduction losses, fast switching, and high voltage tolerance. While discontinued, its HEXFET® technology and DPAK packaging make it a viable choice for power electronics requiring reliability and efficiency. Ideal for industrial, automotive, and power conversion systems, it balances performance with thermal management, though designers should consider modern alternatives for new projects.