Infineon Technologies_IRFR812PBF
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Infineon Technologies
IRFR812PBF

278-IRFR812PBF
PDF Datasheet
MOSFET N-CH 500V 3.6A DPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
TO-252AA (DPAK)
Drain to Source Voltage (Vdss)
500 V
Power Dissipation (Max)
78W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IRFR812PBF Description

IRFR812PBF Description

The IRFR812PBF from Infineon Technologies is a N-channel MOSFET designed for high-voltage applications, featuring a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C. This HEXFET® series MOSFET leverages Metal Oxide Semiconductor (MOSFET) technology, ensuring efficient power handling with a maximum power dissipation of 78W (Tc). Packaged in a DPAK (TO-252) surface-mount form factor, it is optimized for compact PCB designs while maintaining robust thermal performance.

IRFR812PBF Features

  • Low On-Resistance: 2.2Ω (max) @ 2.2A, 10V (Rds(on)), minimizing conduction losses.
  • Fast Switching: Gate charge (Qg) of 20nC @ 10V and input capacitance (Ciss) of 810pF @ 25V, enabling efficient high-frequency operation.
  • High Voltage Tolerance: Vdss of 500V and Vgs(max) of ±20V, suitable for demanding industrial applications.
  • Reliable & Compliant: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term reliability.
  • Optimized Drive Voltage: 10V drive voltage ensures full enhancement with minimal gate drive losses.

IRFR812PBF Applications

  • Power Supplies: Ideal for AC-DC converters, SMPS, and offline flyback designs due to high-voltage capability.
  • Motor Control: Efficiently drives brushless DC motors and inverters in industrial automation.
  • Lighting Systems: Used in LED drivers and ballast control circuits for high-efficiency operation.
  • Energy Management: Suitable for solar inverters and battery protection circuits requiring low Rds(on).

Conclusion of IRFR812PBF

The IRFR812PBF stands out as a high-performance, high-voltage MOSFET with low conduction losses, fast switching, and robust thermal characteristics. Its DPAK packaging, compliance with environmental standards, and versatility make it an excellent choice for power electronics, industrial systems, and energy-efficient designs. Engineers seeking a reliable, high-voltage switching solution will find this MOSFET well-suited for demanding applications.

FAQ

Are there related or alternative parts for IRFR812PBF?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does IRFR812PBF support?
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What is IRFR812PBF?
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