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IRFR812PBF
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IRFR812PBF Description
IRFR812PBF Description
The IRFR812PBF from Infineon Technologies is a N-channel MOSFET designed for high-voltage applications, featuring a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C. This HEXFET® series MOSFET leverages Metal Oxide Semiconductor (MOSFET) technology, ensuring efficient power handling with a maximum power dissipation of 78W (Tc). Packaged in a DPAK (TO-252) surface-mount form factor, it is optimized for compact PCB designs while maintaining robust thermal performance.
IRFR812PBF Features
- Low On-Resistance: 2.2Ω (max) @ 2.2A, 10V (Rds(on)), minimizing conduction losses.
- Fast Switching: Gate charge (Qg) of 20nC @ 10V and input capacitance (Ciss) of 810pF @ 25V, enabling efficient high-frequency operation.
- High Voltage Tolerance: Vdss of 500V and Vgs(max) of ±20V, suitable for demanding industrial applications.
- Reliable & Compliant: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term reliability.
- Optimized Drive Voltage: 10V drive voltage ensures full enhancement with minimal gate drive losses.
IRFR812PBF Applications
- Power Supplies: Ideal for AC-DC converters, SMPS, and offline flyback designs due to high-voltage capability.
- Motor Control: Efficiently drives brushless DC motors and inverters in industrial automation.
- Lighting Systems: Used in LED drivers and ballast control circuits for high-efficiency operation.
- Energy Management: Suitable for solar inverters and battery protection circuits requiring low Rds(on).
Conclusion of IRFR812PBF
The IRFR812PBF stands out as a high-performance, high-voltage MOSFET with low conduction losses, fast switching, and robust thermal characteristics. Its DPAK packaging, compliance with environmental standards, and versatility make it an excellent choice for power electronics, industrial systems, and energy-efficient designs. Engineers seeking a reliable, high-voltage switching solution will find this MOSFET well-suited for demanding applications.



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