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IRFS31N20DPBF

IRFS31N20DPBF Description

The IRFS31N20DPBF from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. With a 200V drain-to-source voltage (Vdss) and 31A continuous drain current (Id), this HEXFET® series device delivers robust performance in a D2PAK (TO-263) surface-mount package. It features a low on-resistance (Rds(on)) of 82mΩ at 10V gate drive, ensuring minimal conduction losses and high efficiency. The MOSFET operates with a gate threshold voltage (Vgs(th)) of up to 5.5V and supports a maximum gate-source voltage (Vgs) of ±30V, making it suitable for a wide range of switching applications.

IRFS31N20DPBF Features

• High Power Handling: Supports 200W power dissipation (Tc) and 3.1W (Ta), ideal for high-current applications.
• Low Gate Charge (Qg): 107nC at 10V reduces switching losses, enhancing efficiency in high-frequency circuits.
• Optimized Input Capacitance: 2370pF (Ciss) at 25V ensures fast switching performance.
• Robust Construction: ROHS3 compliant and REACH unaffected, meeting stringent environmental standards.
• Wide Operating Range: Suitable for 10V gate drive systems with excellent thermal stability.

IRFS31N20DPBF Applications

This MOSFET is ideal for:

• Switching Power Supplies: High efficiency and low Rds(on) minimize energy loss in DC-DC converters.
• Motor Control: Handles high current loads in industrial and automotive motor drives.
• Inverters and UPS Systems: Reliable performance in energy conversion and backup power applications.
• LED Lighting Drivers: Efficient power management for high-brightness LED arrays.

Conclusion of IRFS31N20DPBF

The IRFS31N20DPBF stands out for its high voltage tolerance, low on-resistance, and superior thermal performance, making it a top choice for power electronics designers. Its D2PAK package ensures easy integration into surface-mount designs, while Infineon’s HEXFET® technology guarantees reliability in demanding environments. Whether for industrial, automotive, or consumer electronics, this MOSFET delivers efficiency, durability, and precision in high-power applications.