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IRFS33N15D
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IRFS33N15D Description
IRFS33N15D Description
The IRFS33N15D from Infineon Technologies is a N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 150V drain-to-source voltage (Vdss) and 33A continuous drain current (Id), it delivers robust performance in demanding power management systems. The device features a low on-resistance (Rds(on)) of 56mΩ at 10V gate drive, minimizing conduction losses and improving thermal efficiency. Packaged in a D2PAK (TO-263) surface-mount format, it combines high power density with reliable thermal dissipation, supporting up to 170W power dissipation at Tc.
IRFS33N15D Features
- Low Rds(on): 56mΩ @ 20A, 10V ensures reduced power loss and higher efficiency.
- High Voltage Rating: 150V Vdss suits medium-voltage applications.
- Fast Switching: Optimized gate charge (Qg) of 90nC @ 10V enhances switching speed.
- Robust Thermal Performance: 170W (Tc) power dissipation capability with D2PAK packaging.
- Wide Vgs Range: ±30V gate-source voltage tolerance for flexible drive compatibility.
- Reliable Technology: Infineon’s HEXFET® MOSFET technology ensures durability and low conduction losses.
IRFS33N15D Applications
Ideal for:
- DC-DC Converters: High-efficiency buck/boost circuits in industrial and automotive systems.
- Motor Drives: Low-loss switching for brushed/brushless motor control.
- Power Supplies: SMPS, UPS, and inverter designs requiring high current handling.
- Solar Inverters: Medium-voltage energy conversion with minimal thermal stress.
- Industrial Automation: Reliable performance in PLCs and robotic power stages.
Conclusion of IRFS33N15D
The IRFS33N15D excels in high-current, medium-voltage applications, offering a balance of low Rds(on), fast switching, and thermal robustness. While now obsolete, its legacy design remains relevant for systems prioritizing efficiency and power density. Engineers seeking alternatives should consider Infineon’s newer HEXFET® generations for enhanced performance and availability.



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