Infineon Technologies_IRFS4610TRLPBF
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Infineon Technologies
IRFS4610TRLPBF

278-IRFS4610TRLPBF
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MOSFET N-CH 100V 73A D2PAK
12 weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
53
Input Capacitance (Ciss) (Max) @ Vds
3550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Typical Rise Time (ns)
87
PPAP
Unknown
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
18
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IRFS4610TRLPBF Description

IRFS4610TRLPBF Description

The IRFS4610TRLPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications in the electronics industry. This device is part of the HEXFET® series and is offered in a D2PAK package, suitable for surface mount applications. With a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 73A at 25°C, the IRFS4610TRLPBF is capable of handling high power levels while maintaining efficiency.

IRFS4610TRLPBF Features

  • Technology: MOSFET (Metal Oxide) - Offers excellent electrical characteristics and reliability.
  • Drain to Source Voltage (Vdss): 100V - Suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc) - Capable of handling high current loads.
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V - Provides low on-resistance for efficient power dissipation.
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10V - Minimizes switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V - Reduces parasitic effects and enhances performance.
  • Vgs (Max): ±20V - Offers flexibility in gate voltage requirements.
  • Drive Voltage (Max Rds On, Min Rds On): 10V - Ensures reliable operation across a wide range of gate voltages.
  • Power Dissipation (Max): 190W (Tc) - Capable of dissipating high power levels without overheating.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for use in various environmental conditions.

IRFS4610TRLPBF Applications

The IRFS4610TRLPBF is ideal for applications that require high power handling, low on-resistance, and efficient power dissipation. Some specific use cases include:

  1. Power Electronics: In power supplies, converters, and inverters where high current and voltage ratings are essential.
  2. Industrial Automation: For motor control and drive applications, where high efficiency and reliability are crucial.
  3. Automotive: In electric vehicle (EV) charging systems and power management circuits, where high power and safety are paramount.
  4. Renewable Energy: In solar inverters and wind power systems, where high efficiency and reliability are required.

Conclusion of IRFS4610TRLPBF

The IRFS4610TRLPBF from Infineon Technologies is a high-performance N-Channel MOSFET designed for demanding applications in power electronics, industrial automation, automotive, and renewable energy sectors. With its high drain-source voltage, low on-resistance, and efficient power dissipation, the IRFS4610TRLPBF offers a reliable and efficient solution for high-power applications. Its unique features, such as low gate charge and input capacitance, further enhance its performance and make it a preferred choice over similar models in the market.

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