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IRFS7730PBF

IRFS7730PBF Description

The IRFS7730PBF from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. With a 75V drain-to-source voltage (Vdss) and 195A continuous drain current (Id), this device delivers robust power handling in a compact D2PAK (TO-263) surface-mount package. It features ultra-low on-resistance (Rds(on)) of 2.6mΩ at 10V gate drive, minimizing conduction losses and improving efficiency. The MOSFET is part of Infineon’s HEXFET® and StrongIRFET™ series, known for reliability and high current capability.

IRFS7730PBF Features

• Low Rds(on): 2.6mΩ @ 100A, 10V ensures reduced power dissipation and thermal stress.
• High Current Handling: 195A (Tc) at 25°C, suitable for high-power applications.
• Fast Switching: Gate charge (Qg) of 407nC @ 10V and input capacitance (Ciss) of 13,660pF @ 25V optimize switching performance.
• Robust Gate Drive: Vgs(max) of ±20V and drive voltage range of 6V–10V for flexible control.
• Thermal Efficiency: 375W power dissipation (Tc) ensures stable operation under high loads.
• Reliability: RoHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

IRFS7730PBF Applications

• Power Supplies: High-efficiency DC-DC converters and SMPS.
• Motor Control: Ideal for automotive and industrial motor drives.
• Battery Management: Used in high-current discharge/charge circuits for EVs and energy storage.
• Inverters: Suitable for solar inverters and UPS systems.
• Industrial Automation: Robust performance in high-power switching applications.

Conclusion of IRFS7730PBF

The IRFS7730PBF stands out for its low Rds(on), high current capability, and thermal efficiency, making it a top choice for power electronics designers. Its HEXFET® technology ensures reliability in harsh environments, while the D2PAK package offers space-saving benefits. Whether in automotive, industrial, or renewable energy systems, this MOSFET provides a balance of performance, efficiency, and durability.