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IRFSL7437PBF
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IRFSL7437PBF Description
IRFSL7437PBF Description
The IRFSL7437PBF is a high-performance MOSFET N-CH 40V 195A TO262 device manufactured by Infineon Technologies. This Single FET is part of the HEXFET® and StrongIRFET™ series, designed to deliver exceptional performance in various electronic applications. With a maximum drain-to-source voltage of 40V, continuous drain current of 195A at 25°C, and a power dissipation of up to 230W, the IRFSL7437PBF is a robust and reliable choice for demanding applications.
IRFSL7437PBF Features
- Technology: MOSFET (Metal Oxide)
- Input Capacitance (Ciss): 7330 pF @ 25 V
- Gate Charge (Qg): 225 nC @ 10 V
- Drain to Source Voltage (Vdss): 40 V
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max): 1.8mOhm @ 100A, 10V
- Vgs(th) (Max): 3.9V @ 150µA
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs (Max): ±20V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Package: Tube
IRFSL7437PBF Applications
The IRFSL7437PBF is ideal for a wide range of applications where high power and performance are required. Some specific use cases include:
- Industrial Motor Controls: Due to its high current and voltage ratings, the IRFSL7437PBF is well-suited for motor control applications in industrial settings.
- Power Supplies: The device's ability to handle high power dissipation makes it an excellent choice for power supply designs.
- Automotive Electronics: The IRFSL7437PBF can be used in various automotive electronic systems, such as electric power steering and braking systems, where high reliability and performance are crucial.
Conclusion of IRFSL7437PBF
The IRFSL7437PBF from Infineon Technologies is a powerful and versatile MOSFET N-CH device. Its unique features, such as high input capacitance, low gate charge, and excellent thermal performance, make it a standout choice for demanding applications. With its robust design and compliance with industry standards like RoHS3, the IRFSL7437PBF is a reliable and eco-friendly option for engineers looking to enhance their electronic designs.



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