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IRFU220N

IRFU220N Description

The IRFU220N from Infineon Technologies is a 200V N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a continuous drain current (Id) of 5A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 600mΩ at 10V gate drive, this MOSFET offers robust performance in medium-power circuits. Its 200V drain-to-source voltage (Vdss) rating makes it suitable for applications requiring higher voltage handling. The device features a maximum gate charge (Qg) of 23nC and an input capacitance (Ciss) of 300pF, ensuring fast switching with minimal gate drive losses.

IRFU220N Features

• High Voltage Handling: 200V Vdss for demanding power applications.
• Low Rds(on): 600mΩ @ 10V Vgs reduces conduction losses.
• Fast Switching: Optimized gate charge (23nC) and input capacitance (300pF) for efficient operation.
• Robust Construction: Through-hole IPAK package with MSL 1 (unlimited) moisture sensitivity, ensuring reliability.
• Wide Gate Drive Range: Supports up to ±20V Vgs, offering flexibility in drive circuitry.
• Obsolete Status: While no longer in production, it remains a viable choice for legacy designs or replacements.

IRFU220N Applications

• Switching Power Supplies: Efficient DC-DC converters and SMPS designs.
• Motor Control: Suitable for low-to-medium power motor drives and H-bridge configurations.
• Industrial Automation: Relays, solenoids, and inductive load switching.
• LED Drivers: High-voltage LED lighting systems requiring efficient switching.
• Audio Amplifiers: Power stage applications in class-D amplifiers.

Conclusion of IRFU220N

The IRFU220N is a high-voltage, low-Rds(on) MOSFET ideal for power switching applications where efficiency and reliability are critical. While marked as obsolete, its performance characteristics—such as fast switching, low conduction losses, and robust packaging—make it a strong candidate for legacy systems or designs requiring proven components. Its wide gate drive tolerance and HEXFET® technology provide advantages over similar models, particularly in industrial and power supply applications. Engineers seeking a cost-effective, high-performance MOSFET for medium-power circuits may still find value in this Infineon offering.