Infineon Technologies_IRFU220NPBF
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Infineon Technologies
IRFU220NPBF

278-IRFU220NPBF
PDF Datasheet
MOSFET N-CH 200V 5A IPAK
10 weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
20
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Typical Rise Time (ns)
11
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
6.4
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IRFU220NPBF Description

IRFU220NPBF Description

The IRFU220NPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications requiring high power and efficiency. With a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5A at 25°C, this device is well-suited for a variety of high-power applications. The IRFU220NPBF features a low on-resistance (Rds On) of 600mOhm at 2.9A and 10V, ensuring minimal power dissipation and high efficiency. The device is also designed for low gate charge (Qg) of 23nC at 10V, enabling fast switching and reduced power consumption.

IRFU220NPBF Features

  • High Drain-to-Source Voltage (Vdss): 200V for high-voltage applications
  • Continuous Drain Current (Id): 5A at 25°C for high-power handling
  • Low On-Resistance (Rds On): 600mOhm at 2.9A and 10V for minimal power dissipation
  • Low Gate Charge (Qg): 23nC at 10V for fast switching and reduced power consumption
  • Gate-Source Voltage (Vgs): ±20V for wide input voltage range
  • Drain-Source On-State Resistance (Rds On): 600mOhm at 2.9A and 10V for high efficiency
  • Gate Threshold Voltage (Vgs(th)): 4V at 250µA for reliable operation
  • Series: HEXFET® for high-performance applications
  • Mounting Type: Through Hole for easy integration into various systems
  • Package: Tube for protection and ease of handling

IRFU220NPBF Applications

The IRFU220NPBF is ideal for a wide range of high-power applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, the IRFU220NPBF is suitable for power supply designs requiring high efficiency and reliability.
  2. Motor Controls: The device's low on-resistance and high current capabilities make it an excellent choice for motor control applications, ensuring efficient operation and long device life.
  3. Industrial Automation: The IRFU220NPBF's robust performance and reliability make it well-suited for industrial automation systems, where high power and efficiency are critical.
  4. Automotive Applications: The device's high voltage and current ratings, along with its low on-resistance, make it ideal for automotive applications such as electric vehicle chargers and power management systems.

Conclusion of IRFU220NPBF

The IRFU220NPBF from Infineon Technologies is a high-performance N-Channel MOSFET designed for demanding high-power applications. Its unique combination of high drain-to-source voltage, low on-resistance, and low gate charge make it an excellent choice for power supplies, motor controls, industrial automation, and automotive applications. With its robust performance and reliability, the IRFU220NPBF is a valuable addition to any high-power electronic design.

FAQ

What is the mounting type of IRFU220NPBF?
IRFU220NPBF uses a Through Hole mounting style based on the listed product specifications.
What is IRFU220NPBF?
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