


Infineon Technologies
IRFU3410PBF
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
IRFU3410PBF Description
IRFU3410PBF Description
The IRFU3410PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. With a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 31A at 25°C, this device is well-suited for demanding power electronics applications.
IRFU3410PBF Features
- Technology: MOSFET (Metal Oxide) - Utilizes a metal oxide semiconductor structure for efficient switching and low power dissipation.
- Input Capacitance (Ciss): 1690 pF @ 25 V - Minimizes input capacitance for faster switching and reduced power loss.
- Gate Charge (Qg): 56 nC @ 10 V - Reduces switching losses and improves efficiency.
- Rds On (Max): 39 mOhm @ 18A, 10V - Offers low on-resistance for minimal power dissipation and high efficiency.
- Vgs(th) (Max): 4V @ 250µA - Ensures reliable threshold voltage performance.
- Power Dissipation: 3W (Ta), 110W (Tc) - Capable of handling high power dissipation in various thermal conditions.
- Mounting Type: Through Hole - Facilitates easy integration into existing designs.
- Package: Tube - Provides protection and ease of handling during assembly.
IRFU3410PBF Applications
The IRFU3410PBF is ideal for a variety of high-power applications, including:
- Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient power conversion.
- Motor Controls: Employed in motor drive circuits for precise speed and torque control.
- Industrial Automation: Used in high-power industrial control systems for reliable operation.
- Automotive Applications: Suitable for automotive power electronics, such as electric power steering and battery management systems.
Conclusion of IRFU3410PBF
The IRFU3410PBF from Infineon Technologies is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and input capacitance, make it an excellent choice for demanding power electronics applications where efficiency and performance are critical. Despite being marked as "Not For New Designs," the IRFU3410PBF remains a reliable option for existing designs and applications where high power handling and efficient switching are required.



.png)











.png?x-oss-process=image/format,webp/resize,h_32)










