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IRFU3607PBF

IRFU3607PBF Description

The IRFU3607PBF from Infineon Technologies is a high-performance N-channel HEXFET® MOSFET designed for robust power management applications. With a 75V drain-to-source voltage (Vdss) and 56A continuous drain current (Id), this device delivers efficient switching and low conduction losses. Its 9mOhm maximum on-resistance (Rds(on)) at 10V gate drive ensures minimal power dissipation, making it ideal for high-current applications. Packaged in a Through-Hole IPAK format, the IRFU3607PBF is well-suited for industrial and automotive environments where reliability and thermal performance are critical.

IRFU3607PBF Features

• Low Rds(on): 9mOhm @ 46A, 10V for reduced conduction losses.
• High Current Handling: 56A continuous drain current (Tc) ensures robust performance in demanding circuits.
• Fast Switching: Gate charge (Qg) of 84nC @ 10V and input capacitance (Ciss) of 3070pF @ 50V optimize switching efficiency.
• Wide Voltage Range: ±20V gate-source voltage (Vgs) tolerance enhances flexibility in drive circuits.
• Thermal Efficiency: 140W maximum power dissipation (Tc) with excellent thermal management.
• Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (Unlimited) for long-term durability.

IRFU3607PBF Applications

• Power Supplies: High-efficiency DC-DC converters and SMPS designs.
• Motor Control: Ideal for H-bridge and PWM motor drives in industrial automation.
• Automotive Systems: Suitable for electronic control units (ECUs), LED drivers, and battery management.
• Industrial Equipment: Robust performance in inverters, welding machines, and power tools.

Conclusion of IRFU3607PBF

The IRFU3607PBF stands out as a high-efficiency, high-current HEXFET® MOSFET with superior thermal and electrical characteristics. Its low Rds(on), high current rating, and rugged construction make it a preferred choice for power electronics engineers. Whether in automotive, industrial, or power conversion systems, this MOSFET ensures reliable operation under demanding conditions, backed by Infineon’s proven HEXFET® technology.