


Infineon Technologies
IRFZ44ZPBF
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
IRFZ44ZPBF Description
IRFZ44ZPBF Description
The IRFZ44ZPBF from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 55V drain-to-source voltage (Vdss) and 51A continuous drain current (Id), this device offers robust performance in power management circuits. Its low on-resistance (Rds(on)) of 13.9mΩ at 10V gate drive ensures minimal conduction losses, making it ideal for high-current applications. The MOSFET features a TO-220AB package for through-hole mounting, providing excellent thermal dissipation with a maximum power rating of 80W (Tc). Although marked as "Not For New Designs," it remains a reliable choice for legacy systems requiring high power handling and efficiency.
IRFZ44ZPBF Features
- Low Rds(on): 13.9mΩ @ 31A, 10V, reducing power losses in high-current paths.
- High Current Capability: 51A continuous drain current at 25°C (case temperature).
- Fast Switching: Optimized gate charge (43nC @ 10V) and input capacitance (1420pF @ 25V) for efficient high-frequency operation.
- Robust Gate Drive: Supports ±20V Vgs, enhancing noise immunity and reliability.
- Thermal Efficiency: TO-220AB package with 80W power dissipation for effective heat management.
- Compliance: ROHS3 and REACH unaffected, meeting environmental and safety standards.
IRFZ44ZPBF Applications
This MOSFET excels in:
- DC-DC Converters: High-efficiency step-down/step-up power supplies.
- Motor Control: Driver stages for brushed/brushless motors in industrial and automotive systems.
- Power Switching: Load switches, relays, and solenoid drivers.
- UPS/Inverters: Energy conversion in backup power systems.
- Legacy Electronics: Maintenance and repair of existing designs requiring high-current switching.
Conclusion of IRFZ44ZPBF
The IRFZ44ZPBF is a proven solution for demanding power electronics, offering low conduction losses, high current handling, and robust thermal performance. While newer alternatives may exist, its reliability and efficiency make it suitable for legacy and high-power applications. Engineers valuing cost-effective, high-performance MOSFETs will find this device a practical choice for industrial, automotive, and power supply designs.



.png)











.png?x-oss-process=image/format,webp/resize,h_32)










