The IRG4IBC20W is a single insulated gate bipolar transistor (IGBT) designed and manufactured by Infineon Technologies. It is packaged in a TO220FP tube, making it suitable for through-hole mounting. This IGBT is designed to operate at a maximum voltage of 600V and can handle a maximum collector current of 11.8A. With a maximum power rating of 34W, the IRG4IBC20W is ideal for a variety of high-power applications.
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The IRG4IBC20W is ideal for a variety of high-power applications, including:
The IRG4IBC20W is a high-performance IGBT designed for demanding high-power applications. Its unique combination of technical specifications, performance benefits, and unique features make it an ideal choice for a variety of applications. However, its obsolete status and limited availability may require careful consideration when selecting this component for new designs. Despite this, the IRG4IBC20W remains a valuable option for legacy systems and specialized applications where its performance characteristics are critical.
Download datasheets and manufacturer documentation for IRG4IBC20W