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IRG4PC30KD

IRG4PC30KD Description

The IRG4PC30KD from Infineon Technologies is a high-performance 600V, 28A IGBT (Insulated Gate Bipolar Transistor) housed in a TO-247AC package, designed for robust power switching applications. With a maximum power dissipation of 100W, this device offers a balanced combination of low conduction losses (Vce(on) of 2.7V @ 15V, 16A) and fast switching characteristics (trr = 42ns, Td(on/off) = 60ns/160ns). Although marked as obsolete, it remains a reliable choice for legacy systems due to its proven performance in demanding environments.

IRG4PCPC30KD Features

• High Voltage & Current Handling: Supports 600V Vce breakdown and 28A continuous current (58A pulsed), making it suitable for high-power circuits.
• Efficient Switching: Low gate charge (67nC) and switching energy (600µJ on, 580µJ off) ensure minimal power loss during transitions.
• Standard Input Type: Compatible with conventional drive circuits, simplifying integration.
• Robust Packaging: TO-247AC provides excellent thermal dissipation, critical for sustained high-power operation.
• REACH Unaffected: Compliant with environmental regulations, ensuring long-term usability in compliant designs.

IRG4PC30KD Applications

• Motor Drives: Ideal for AC motor control in industrial automation due to its high current tolerance.
• Power Supplies: Used in SMPS (Switched-Mode Power Supplies) and UPS systems for efficient energy conversion.
• Welding Equipment: Suited for inverters requiring high-voltage switching reliability.
• Renewable Energy Systems: Effective in solar inverters where low switching losses are critical.

Conclusion of IRG4PC30KD

The IRG4PC30KD is a high-reliability IGBT optimized for high-voltage, high-current switching with low losses. While obsolete, its TO-247AC package, fast recovery time, and robust thermal performance make it a viable option for legacy or cost-sensitive designs in industrial, energy, and motor control applications. Engineers seeking a proven 600V IGBT with balanced performance may still find value in this Infineon solution.