Infineon Technologies_IRG4RC10SD
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Infineon Technologies
IRG4RC10SD

279-IRG4RC10SD
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IGBT 600V 14A 38W DPAK

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Tech Specifications

Reverse Recovery Time (trr)
28 ns
Product Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
600 V
Td (on/off) @ 25°C
76ns/815ns
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
REACH Status
REACH Unaffected
Mfr
Infineon Technologies
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IRG4RC10SD Description

IRG4RC10SD Description

The IRG4RC10SD is a Single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, designed for high-power applications. With a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 14A, this device is well-suited for demanding power electronics requirements. The IRG4RC10SD is packaged in a DPAK (Dual Plastic Aided Package), making it ideal for surface-mount applications.

IRG4RC10SD Features

  • Technical Specifications:

    • Reverse Recovery Time (trr): 28 ns
    • Voltage - Collector Emitter Breakdown (Max): 600 V
    • Td (on/off) @ 25°C: 76ns/815ns
    • Switching Energy: 310µJ (on), 3.28mJ (off)
    • Current - Collector (Ic) (Max): 14 A
    • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
    • Gate Charge: 15 nC
    • Power - Max: 38 W
  • Performance Benefits:

    • Low reverse recovery time for fast switching applications
    • High breakdown voltage and current ratings for robust power handling
    • Low on-state voltage drop for improved efficiency
  • Unique Advantages:

    • REACH Unaffected status ensures compliance with European chemical regulations
    • Moisture Sensitivity Level (MSL) 1 allows for unlimited storage time before reflow soldering

IRG4RC10SD Applications

The IRG4RC10SD is ideal for various high-power applications, including:

  • Industrial Motor Drives: Its high current and voltage ratings make it suitable for motor control in industrial settings.
  • Power Supplies: The device's ability to handle high power levels makes it a good choice for power supply designs.
  • Renewable Energy Systems: Its robust performance characteristics are well-suited for solar inverters and wind power applications.

Conclusion of IRG4RC10SD

The IRG4RC10SD from Infineon Technologies is a high-performance Single IGBT designed for demanding power electronics applications. Its combination of high voltage and current ratings, low on-state voltage drop, and fast switching capabilities make it an excellent choice for industrial motor drives, power supplies, and renewable energy systems. While the product is now considered obsolete, its unique features and advantages still make it a valuable option for legacy systems or specific applications where its performance characteristics are required.

FAQ

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Yes. IRG4RC10SD currently shows 7370 unit(s) in stock.
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