Infineon Technologies_IRG7PH35UD-EP
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Infineon Technologies
IRG7PH35UD-EP

279-IRG7PH35UD-EP
PDF Datasheet
IGBT 1200V 50A COPAK247

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Tech Specifications

Reverse Recovery Time (trr)
105 ns
Product Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
1200 V
Td (on/off) @ 25°C
30ns/160ns
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Mfr
Infineon Technologies
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IRG7PH35UD-EP Description

IRG7PH35UD-EP Description

The IRG7PH35UD-EP is a high-performance, single IGBT from Infineon Technologies, designed for demanding power electronic applications. With a maximum collector-emitter breakdown voltage of 1200V and a maximum collector current of 50A, this device offers robust performance in high-voltage, high-current applications.

IRG7PH35UD-EP Features

  • Technical Specifications: The IRG7PH35UD-EP boasts a reverse recovery time of 105ns, ensuring fast switching capabilities. Its trench IGBT technology provides superior conduction and switching performance compared to planar IGBTs. The device also features a low on-state voltage drop of 2.2V at 20A, 15V, contributing to high efficiency in power conversion applications.

  • Performance Benefits: The IRG7PH35UD-EP's low gate charge of 85nC enables fast switching with minimal energy loss. Its low switching energy of 1.06mJ (on) and 620µJ (off) further contributes to high efficiency. The device's high power rating of 180W allows it to handle demanding power electronic applications.

  • Unique Advantages: The IRG7PH35UD-EP's moisture sensitivity level (MSL) of 1 (unlimited) ensures reliable performance in harsh environments. Its RoHS3 compliance and REACH unaffected status make it suitable for environmentally conscious applications. The device's through-hole mounting type and COPAK247 package provide flexibility in PCB design.

IRG7PH35UD-EP Applications

The IRG7PH35UD-EP is ideal for a wide range of high-voltage, high-current power electronic applications, including:

  • Industrial Motor Drives: Its high voltage and current ratings make it suitable for variable frequency drives (VFDs) and motor control applications.
  • Power Supplies: The device's low on-state voltage drop and high efficiency make it an excellent choice for power supply designs.
  • Renewable Energy: Its robust performance and reliability make it suitable for solar inverters and wind energy applications.
  • Electric Vehicles: The IRG7PH35UD-EP's high voltage and current ratings make it ideal for electric vehicle (EV) charging and powertrain applications.

Conclusion of IRG7PH35UD-EP

The IRG7PH35UD-EP is a high-performance, single IGBT from Infineon Technologies, offering robust performance in high-voltage, high-current applications. Its unique features, such as trench IGBT technology, low gate charge, and RoHS3 compliance, make it an excellent choice for demanding power electronic applications. With its wide range of applications, the IRG7PH35UD-EP is a versatile solution for engineers designing power electronic systems.

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