Infineon Technologies_IRL3803STRRPBF
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Infineon Technologies
IRL3803STRRPBF

278-IRL3803STRRPBF
PDF Datasheet
MOSFET N-CH 30V 140A D2PAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 4.5 V
Product Status
Obsolete
Supplier Device Package
D2PAK
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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IRL3803STRRPBF Description

IRL3803STRRPBF Description

The IRL3803STRRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high power and efficiency. With a drain-to-source voltage of 30V and continuous drain current of 140A at 25°C, this device is suitable for a wide range of power electronics applications.

IRL3803STRRPBF Features

  • High Input Capacitance (Ciss): 5000 pF @ 25V, ensuring fast switching speeds and reduced input capacitance.
  • Low Gate Charge (Qg): 140 nC @ 4.5V, minimizing power loss during switching.
  • D2PAK Package: Surface-mount package for efficient heat dissipation and space-saving design.
  • Low Rds On: 6mOhm @ 71A, 10V, providing low on-state resistance for high efficiency.
  • Robust Voltage Range: Vgs (Max) of ±16V and Vdss of 30V, ensuring reliable operation in various power circuits.
  • Compliance: RoHS3 compliant and REACH unaffected, adhering to environmental regulations.

IRL3803STRRPBF Applications

The IRL3803STRRPBF is ideal for applications where high power and efficiency are critical, such as:

  • Power Supplies: High-efficiency power conversion in switch-mode power supplies (SMPS).
  • Motor Controls: Efficient motor drive and control in industrial and automotive applications.
  • Inverters: High-power inverter circuits for renewable energy systems and electric vehicles.
  • Industrial Controls: Reliable operation in harsh industrial environments with high power demands.

Conclusion of IRL3803STRRPBF

The IRL3803STRRPBF from Infineon Technologies offers a combination of high power, efficiency, and robustness, making it an excellent choice for demanding power electronics applications. Its unique features, such as low gate charge and high input capacitance, provide performance benefits over similar models. Despite being obsolete, this device remains a popular choice for applications where high power and reliability are paramount.

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