Infineon Technologies_IRL530NPBF
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Infineon Technologies
IRL530NPBF

278-IRL530NPBF
PDF Datasheet
MOSFET N-CH 100V 17A TO220AB

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V
Product Status
Obsolete
Supplier Device Package
TO-220AB
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
79W (Tc)
Package / Case
TO-220-3
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IRL530NPBF Description

IRL530NPBF Description

The IRL530NPBF from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 100V drain-to-source voltage (Vdss) and 17A continuous drain current (Id), it offers robust performance in power management circuits. This through-hole TO-220AB packaged device features a low on-resistance (Rds On) of 100mOhm at 9A, 10V, minimizing conduction losses. Although marked as obsolete, its legacy design ensures reliability in existing systems. The MOSFET operates with a gate threshold voltage (Vgs(th)) of 2V at 250µA, making it compatible with low-drive circuits. Its 800pF input capacitance (Ciss) and 34nC gate charge (Qg) contribute to fast switching speeds, ideal for high-frequency applications.

IRL530NPBF Features

  • High Voltage & Current Handling: Supports 100V Vdss and 17A Id, suitable for medium-power applications.
  • Low Rds On: 100mOhm @ 10V Vgs reduces power dissipation, enhancing efficiency.
  • Fast Switching: Low Qg (34nC) and Ciss (800pF) enable rapid transitions, critical for PWM and DC-DC converters.
  • Robust Construction: TO-220AB package ensures thermal stability with a 79W power dissipation (Tc).
  • Wide Drive Compatibility: Vgs range of ±16V and low Vgs(th) of 2V allow use with 3.3V/5V logic.
  • Compliance: ROHS3 and REACH compliant, with MSL 1 (unlimited) shelf life.

IRL530NPBF Applications

  • Power Supplies: Efficiently used in SMPS, DC-DC converters, and voltage regulators.
  • Motor Control: Ideal for H-bridge circuits and brushless DC motor drivers due to fast switching.
  • Automotive Systems: Suitable for load switching and solenoid control in 12V/24V systems.
  • Industrial Equipment: Deployed in relay replacements and inverters for low-loss operation.
  • Audio Amplifiers: Low Rds On minimizes distortion in class-D amplifier designs.

Conclusion of IRL530NPBF

The IRL530NPBF remains a viable choice for designers needing a cost-effective, high-performance N-channel MOSFET in legacy or niche applications. Its low conduction losses, fast switching, and thermal resilience make it particularly valuable in power conversion and motor control. While newer alternatives exist, this Infineon HEXFET® model continues to deliver reliability in systems where its specifications align with operational demands.

FAQ

What is IRL530NPBF?
IRL530NPBF is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
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