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IRL7833PBF

IRL7833PBF Description

The IRL7833PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high current and voltage handling capabilities. This device features a maximum drain-to-source voltage (Vdss) of 30V and can handle continuous drain currents up to 150A at 25°C. With a low on-resistance of 3.8mOhm at 38A and 10V, the IRL7833PBF offers high efficiency and reduced power dissipation. The device is packaged in a through-hole TO220AB package, making it suitable for a wide range of applications.

IRL7833PBF Features

• N-Channel MOSFET with 30V drain-to-source voltage and 150A continuous drain current
• Low on-resistance of 3.8mOhm at 38A and 10V for high efficiency
• Maximum gate-source voltage (Vgs) of ±20V for flexible drive options
• Maximum power dissipation of 140W at Tc
• Through-hole TO220AB package for easy integration
• REACH unaffected and RoHS3 compliant for environmental compliance
• Moisture sensitivity level (MSL) of 1 for unlimited storage time
• Ideal for applications requiring high current and voltage handling

IRL7833PBF Applications

The IRL7833PBF is ideal for applications that require high current and voltage handling, such as:

1. Motor control and drives
2. Power supplies and converters
3. Automotive electronics
4. Industrial control systems
5. Renewable energy systems

Conclusion of IRL7833PBF

The IRL7833PBF is a versatile and high-performance N-Channel MOSFET from Infineon Technologies, offering a combination of high current and voltage handling capabilities, low on-resistance, and flexible drive options. Its through-hole TO220AB package and compliance with environmental regulations make it suitable for a wide range of applications, including motor control, power supplies, and automotive electronics. While it is not recommended for new designs, the IRL7833PBF remains a reliable choice for existing applications that require its specific performance characteristics.