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IRL8113PBF

IRL8113PBF Description

The IRL8113PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. With a drain-source voltage (Vdss) of 30 V and continuous drain current (Id) of 105A at 25°C, this device delivers exceptional performance in power electronics. Its low on-resistance (6mOhm at 21A, 10V) and high gate threshold voltage (Vgs(th) of 2.25V at 250µA) ensure efficient operation and reduced power loss.

IRL8113PBF Features

• Technology: MOSFET (Metal Oxide), leveraging advanced HEXFET® series for superior performance.
• Input Capacitance (Ciss): 2840 pF @ 15 V, ensuring fast switching and minimal capacitive loading.
• Gate Charge (Qg): 35 nC @ 4.5 V, reducing switching losses and improving efficiency.
• Mounting Type: Through Hole, providing reliable mechanical support and thermal dissipation.
• Package: Tube, offering protection and ease of handling during assembly.
• Power Dissipation (Max): 110W (Tc), suitable for high-power applications.
• RoHS Status: ROHS3 Compliant, ensuring environmental sustainability.
• Moisture Sensitivity Level (MSL): 1 (Unlimited), allowing for flexible storage and handling conditions.

IRL8113PBF Applications

The IRL8113PBF is ideal for applications where high power handling, efficient switching, and reliability are critical. Some specific use cases include:

• Power Supplies: Utilizing its high Vdss and Id ratings, the IRL8113PBF is suitable for power supply designs requiring robust performance.
• Motor Drives: Its low Rds(on) and high Id make it an excellent choice for motor drive applications, ensuring efficient power transfer and reduced losses.
• Industrial Controls: The device's high power dissipation capability and robust construction make it ideal for demanding industrial control applications.

Conclusion of IRL8113PBF

While the IRL8113PBF has been classified as obsolete, it remains a powerful solution for legacy systems or applications where its specific performance characteristics are required. Its combination of high power handling, efficient switching, and robust construction make it a reliable choice for demanding power electronics applications. However, for new designs, it is recommended to consider more recent models that offer improved performance and longer-term availability.