Infineon Technologies_IRLB3036PBF
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Infineon Technologies
IRLB3036PBF

278-IRLB3036PBF
PDF Datasheet
MOSFET N-CH 60V 195A TO220AB
12 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
110
Input Capacitance (Ciss) (Max) @ Vds
11210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 4.5 V
Typical Rise Time (ns)
220
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
66
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IRLB3036PBF Description

IRLB3036PBF Description

The IRLB3036PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high power and efficiency. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 195A at 25°C, this device is ideal for demanding power electronic applications. The IRLB3036PBF features a low on-resistance (Rds On) of 2.4mOhm at 165A and 10V, ensuring minimal power loss and high efficiency. Its robust construction and high power dissipation capability of 380W (Tc) make it suitable for a wide range of applications.

IRLB3036PBF Features

  • Technology: MOSFET (Metal Oxide)
  • Series: HEXFET®
  • Vgs (Max): ±16V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Power Dissipation (Max): 380W (Tc)
  • Mounting Type: Through Hole
  • Package: Tube
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Base Product Number: IRLB3036

IRLB3036PBF Applications

The IRLB3036PBF is ideal for a variety of high-power applications, including:

  1. Motor control and drives
  2. Power supplies and converters
  3. Automotive electronics
  4. Industrial automation and control systems
  5. Renewable energy systems, such as solar inverters and wind power converters

Conclusion of IRLB3036PBF

The IRLB3036PBF is a powerful and efficient N-Channel MOSFET from Infineon Technologies, offering a combination of high voltage, low on-resistance, and high power dissipation. Its robust construction and wide range of features make it an excellent choice for demanding power electronic applications. With its HEXFET® series design, the IRLB3036PBF delivers superior performance and reliability, making it a top choice for engineers and designers in the electronics industry.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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