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IRLI2910PBF

IRLI2910PBF Description

The IRLI2910PBF from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 100V drain-to-source voltage (Vdss) and 31A continuous drain current (Id), it delivers robust performance in power management circuits. This MOSFET features a low on-resistance (Rds(on)) of 26mΩ at 16A, 10V, ensuring minimal conduction losses. Its 3700pF input capacitance (Ciss) and 140nC gate charge (Qg) enable fast switching, making it suitable for high-frequency applications. Packaged in a TO-220AB FP through-hole format, it offers reliable thermal dissipation with a 63W power rating (Tc).

IRLI2910PBF Features

• High Voltage & Current Handling: 100V Vdss and 31A Id for demanding power applications.
• Low Rds(on): 26mΩ (max) reduces power loss and improves efficiency.
• Fast Switching: Optimized gate charge (140nC) and capacitance for high-speed operation.
• Robust Construction: TO-220AB FP package ensures effective heat dissipation.
• Wide Drive Voltage Range: 4V to 10V for flexible gate control.
• Reliability: RoHS3 compliant, REACH unaffected, and MSL 1 (unlimited) moisture sensitivity.

IRLI2910PBF Applications

This MOSFET excels in:

• DC-DC Converters: Efficient power conversion in industrial and automotive systems.
• Motor Drives: High-current switching for brushed/brushless motors.
• Power Supplies: SMPS and UPS designs requiring low conduction losses.
• Load Switching: Robust performance in high-side/low-side switch configurations.
• Renewable Energy Systems: Solar inverters and battery management due to high voltage tolerance.

Conclusion of IRLI2910PBF

The IRLI2910PBF combines high voltage capability, low Rds(on), and fast switching, making it ideal for power electronics demanding efficiency and reliability. While marked as obsolete, its performance remains competitive for legacy designs or replacements. Its TO-220AB FP package and Infineon’s HEXFET® technology ensure durability in thermal and electrical stress environments. Engineers should evaluate alternatives for new designs but can leverage this MOSFET’s proven performance in existing applications.