
Infineon Technologies
IRLR7843PBF
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IRLR7843PBF Description
IRLR7843PBF Description
The IRLR7843PBF from Infineon Technologies is a N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 30V drain-to-source voltage (Vdss) and an impressive continuous drain current (Id) of 161A (at Tc=25°C), this device is optimized for low-loss operation in demanding environments. Its ultra-low on-resistance (Rds(on)) of 3.3mΩ at 15A, 10V ensures minimal conduction losses, making it ideal for high-current applications. Packaged in a DPAK (TO-252) surface-mount form factor, it combines robust performance with compact design flexibility.
IRLR7843PBF Features
- Low Rds(on): 3.3mΩ @ 15A, 10V for reduced power dissipation.
- High Current Handling: 161A continuous drain current (Tc) for demanding loads.
- Fast Switching: Low gate charge (Qg) of 50nC @ 4.5V and input capacitance (Ciss) of 4380pF @ 15V ensure efficient high-frequency operation.
- Wide Drive Voltage Range: Supports 4.5V to 20V Vgs, compatible with logic-level and standard gate drivers.
- Robust Thermal Performance: Rated for 140W power dissipation (Tc) with reliable thermal management.
- Industry-Standard Compliance: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for environmental and reliability assurance.
IRLR7843PBF Applications
This MOSFET excels in applications requiring high current, low resistance, and fast switching, such as:
- DC-DC Converters: Efficient power conversion in server, telecom, and automotive systems.
- Motor Drives: High-current control in industrial and robotics applications.
- Battery Management Systems (BMS): Low-loss switching for Li-ion/power tool batteries.
- Synchronous Rectification: Improves efficiency in SMPS and solar inverters.
- Load Switches: High-reliability power distribution in consumer electronics.
Conclusion of IRLR7843PBF
The IRLR7843PBF stands out as a high-performance MOSFET, combining low Rds(on), high current capability, and fast switching in a compact DPAK package. Its wide operating voltage range and thermal robustness make it a superior choice for power electronics designers seeking efficiency and reliability. Whether in automotive, industrial, or consumer applications, this device delivers optimal performance with minimal losses, backed by Infineon’s HEXFET® technology.



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