Infineon Technologies_IRLR8259PBF
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Infineon Technologies
IRLR8259PBF

278-IRLR8259PBF
PDF Datasheet
MOSFET N-CH 25V 57A DPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
TO-252AA (DPAK)
Drain to Source Voltage (Vdss)
25 V
Power Dissipation (Max)
48W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IRLR8259PBF Description

IRLR8259PBF Description

The IRLR8259PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications that require robust power handling and efficient operation. This device features a DPAK package, making it suitable for surface-mount applications in various electronic systems.

IRLR8259PBF Features

  • High Input Capacitance (Ciss): With a maximum of 900 pF @ 13 V, the IRLR8259PBF offers low input capacitance, ensuring fast switching and minimal signal distortion.
  • Low Gate Charge (Qg): The maximum gate charge of 10 nC @ 4.5 V contributes to reduced switching losses and improved efficiency.
  • Robust Drain to Source Voltage (Vdss): Capable of withstanding 25 V, this MOSFET is suitable for applications requiring high voltage.
  • Power Dissipation (Max): The IRLR8259PBF can handle up to 48W of power dissipation, making it ideal for high-power applications.
  • Technology: Utilizing MOSFET (Metal Oxide) technology, this device offers excellent performance and reliability.
  • REACH Status: As a REACH Unaffected product, it meets stringent environmental regulations.
  • Rohs Compliance: The IRLR8259PBF is ROHS3 compliant, ensuring environmental responsibility in manufacturing.
  • Low Rds On: With a maximum of 8.7 mOhm @ 21A, 10V, this MOSFET provides low on-resistance for efficient power delivery.
  • Series: Part of the HEXFET® series, known for its superior performance and reliability.

IRLR8259PBF Applications

The IRLR8259PBF is ideal for a variety of applications where high power handling and efficient operation are critical:

  • Power Electronics: In power supplies and converters, this MOSFET's high power dissipation and low on-resistance make it an excellent choice.
  • Automotive Systems: Due to its robustness and compliance with environmental standards, it is suitable for automotive electronics.
  • Industrial Control: In motor drives and control systems, the IRLR8259PBF's performance benefits contribute to reliable operation.

Conclusion of IRLR8259PBF

The IRLR8259PBF stands out among similar models with its combination of high power dissipation, low on-resistance, and compliance with environmental standards. Its unique features make it an excellent choice for applications requiring high performance and reliability. Infineon Technologies' commitment to quality ensures that this MOSFET is a dependable component in any high-power electronic system.

FAQ

What voltage specification is listed for IRLR8259PBF?
The listed voltage-related specification for IRLR8259PBF is 25 V.
What is IRLR8259PBF?
What is the mounting type of IRLR8259PBF?
Are there related or alternative parts for IRLR8259PBF?
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