Infineon Technologies_IRLR8729PBF
original

Infineon Technologies
IRLR8729PBF

278-IRLR8729PBF
PDF Datasheet
MOSFET N-CH 30V 58A D-PAK

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
TO-252AA (DPAK)
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
55W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Show More

IRLR8729PBF Description

IRLR8729PBF Description

The IRLR8729PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high power dissipation and efficient switching. With a maximum drain-source voltage of 30V and continuous drain current of 58A at 25°C, this device is ideal for power electronics applications. The IRLR8729PBF is packaged in a D-PAK package, suitable for surface mount applications.

IRLR8729PBF Features

  • High Power Dissipation: The IRLR8729PBF can handle a maximum power dissipation of 55W, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance of 8.9mOhm at 25A and 10V, this MOSFET offers low power loss and high efficiency.
  • High Input Capacitance: The IRLR8729PBF has a maximum input capacitance of 1350pF at 15V, ensuring fast switching speeds.
  • Low Gate Charge: A maximum gate charge of 16nC at 4.5V reduces switching losses and improves efficiency.
  • Robust Temperature Performance: The device is designed to operate over a wide temperature range, ensuring reliable performance in various environments.
  • Compliance with Regulations: The IRLR8729PBF is REACH unaffected and RoHS3 compliant, meeting environmental and safety standards.

IRLR8729PBF Applications

The IRLR8729PBF is ideal for various high-power applications, including:

  • Power Supplies: Due to its high power dissipation and low on-resistance, the IRLR8729PBF is suitable for power supply designs.
  • Motor Control: The device's low gate charge and high input capacitance make it suitable for motor control applications, ensuring efficient switching and reduced power loss.
  • Industrial Automation: The IRLR8729PBF's robust temperature performance and high power dissipation make it ideal for industrial automation applications, where reliability and efficiency are critical.

Conclusion of IRLR8729PBF

The IRLR8729PBF from Infineon Technologies is a high-performance N-Channel MOSFET designed for power electronics applications. Its unique combination of high power dissipation, low on-resistance, and fast switching capabilities make it an excellent choice for power supplies, motor control, and industrial automation applications. With its compliance with environmental and safety regulations, the IRLR8729PBF is a reliable and efficient solution for high-power electronic designs.

FAQ

What package or case is IRLR8729PBF available in?
IRLR8729PBF is available in the TO-252-3, DPAK (2 Leads + Tab), SC-63 package / case.
What is IRLR8729PBF?
What is the mounting type of IRLR8729PBF?
What voltage specification is listed for IRLR8729PBF?
What operating temperature range does IRLR8729PBF support?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ