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IRLR8729TRLPBF

IRLR8729TRLPBF Description

The IRLR8729TRLPBF is a high-performance, N-Channel MOSFET from Infineon Technologies. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of up to 58A at 25°C. With a low on-resistance (Rds On) of 8.9mOhm at 25A and 10V, this MOSFET offers high efficiency and low power dissipation, making it ideal for a wide range of applications.

IRLR8729TRLPBF Features

• Technology: MOSFET (Metal Oxide)
• Series: HEXFET®
• Maximum Drain-to-Source Voltage (Vdss): 30V
• Continuous Drain Current (Id) at 25°C: 58A
• Maximum On-Resistance (Rds On) at 25A and 10V: 8.9mOhm
• Maximum Gate-Source Voltage (Vgs): ±20V
• Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
• Maximum Gate Charge (Qg) at 4.5V: 16nC
• Maximum Input Capacitance (Ciss) at 15V: 1350pF
• Maximum Threshold Voltage (Vgs(th)) at 25µA: 2.35V
• Maximum Power Dissipation (Tc): 55W
• RoHS Status: ROHS3 Compliant
• REACH Status: REACH Unaffected
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• Mounting Type: Surface Mount
• Package: Tape & Reel (TR)

IRLR8729TRLPBF Applications

The IRLR8729TRLPBF is well-suited for applications requiring high efficiency, low power dissipation, and high current handling capabilities. Some ideal use cases include:

1. Motor control and drives
2. Power supplies and converters
3. Industrial automation and control systems
4. Automotive electronics
5. Renewable energy systems

Conclusion of IRLR8729TRLPBF

The IRLR8729TRLPBF is a high-performance N-Channel MOSFET from Infineon Technologies, offering a combination of low on-resistance, high current handling, and low power dissipation. Its unique features, such as the HEXFET® series and low gate charge, make it an excellent choice for applications requiring high efficiency and reliability. Despite being classified as obsolete, this MOSFET remains a popular choice for its proven performance and versatility in various high-power applications.