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IRLS3034PBF

IRLS3034PBF Description

The IRLS3034PBF from Infineon Technologies is a high-performance N-channel MOSFET designed for power management applications. With a 40V drain-to-source voltage (Vdss) and an impressive 195A continuous drain current (Id) @ 25°C, this device is optimized for high-efficiency switching. It features Ultra-Low On-Resistance (Rds(on)) of 1.7mOhm @ 195A, 10V, minimizing conduction losses and improving thermal performance. Packaged in a robust D2PAK (TO-263) surface-mount form factor, it is ideal for high-power-density designs.

IRLS3034PBF Features

• Low Gate Charge (Qg): 162nC @ 4.5V ensures fast switching and reduced drive losses.
• High Power Handling: 375W (Tc) power dissipation for demanding thermal environments.
• Wide Vgs Range: ±20V gate-to-source voltage (Vgs) enhances flexibility in drive circuitry.
• Low Threshold Voltage (Vgs(th)): 2.5V @ 250µA enables efficient low-voltage operation.
• Robust HEXFET® Technology: Delivers superior efficiency and reliability in high-current applications.
• Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL 1 (Unlimited) for global compatibility.

IRLS3034PBF Applications

• Switching Power Supplies: High-efficiency DC-DC converters and SMPS designs.
• Motor Control: Ideal for H-bridge and PWM-driven motor drives.
• Automotive Systems: Suitable for 12V/24V battery management and load switching.
• Industrial Power Modules: High-current inverters and UPS systems.
• Energy Storage: Optimized for battery protection and power distribution in BMS.

Conclusion of IRLS3034PBF

The IRLS3034PBF stands out as a high-current, low-loss MOSFET with Infineon’s HEXFET® technology, making it a top choice for power electronics engineers. Its ultra-low Rds(on), high thermal performance, and rugged D2PAK package ensure reliability in high-power switching applications. Whether for industrial, automotive, or energy systems, this MOSFET delivers efficiency, durability, and compliance with global standards.