Infineon Technologies_IRLS3813PBF
original

Infineon Technologies
IRLS3813PBF

278-IRLS3813PBF
PDF Datasheet
MOSFET N-CH 30V 160A D2PAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
83 nC @ 4.5 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
D2PAK
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
195W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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IRLS3813PBF Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the IRLS3813PBF belongs to can be classified under the Discrete Semiconductors. IRLS3813PBF is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. IRLS3813PBF provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

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