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IRLU024N

IRLU024N Description

The IRLU024N from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 55V drain-to-source voltage (Vdss) and 17A continuous drain current (Id), it offers robust performance in power management circuits. This obsolete part features a low on-resistance (Rds(on)) of 65mOhm at 10A, 10V, ensuring minimal conduction losses. Packaged in an I-PAK (TO-251AA) through-hole format, it is suitable for industrial and automotive applications where reliability is critical. The device operates with a gate threshold voltage (Vgs(th)) of 2V max and supports a gate-source voltage (Vgs) range of ±16V, providing flexibility in drive circuit design.

IRLU024N Features

• Low Gate Charge (Qg): 15nC at 5V reduces switching losses, enhancing efficiency in high-frequency applications.
• High Power Dissipation: 45W (Tc) allows sustained performance under thermal stress.
• Optimized Switching Performance: 480pF input capacitance (Ciss) ensures fast turn-on/off transitions.
• Robust Construction: REACH Unaffected and MSL 1 (Unlimited) rating ensures long-term reliability.
• Drive Voltage Flexibility: 4V–10V drive range simplifies compatibility with logic-level and standard gate drivers.

IRLU024N Applications

The IRLU024N excels in:

• DC-DC Converters: Low Rds(on) and Qg improve efficiency in buck/boost topologies.
• Motor Control: High current handling suits brushed/brushless motor drivers.
• Power Supplies: Ideal for SMPS designs requiring <60V operation.
• Automotive Systems: Used in LED drivers, solenoid controls, and battery management.

Conclusion of IRLU024N

While marked obsolete, the IRLU024N remains a viable choice for legacy designs demanding high current, low-loss switching, and through-hole mounting. Its HEXFET® technology ensures durability, and its electrical characteristics make it competitive in cost-sensitive, medium-power applications. Engineers should verify alternative active parts for new designs but can leverage this MOSFET’s proven performance in existing systems.