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IRLZ24NPBF

IRLZ24NPBF Description

The IRLZ24NPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power dissipation and efficient switching. With a drain-source voltage of 55V and continuous drain current of 18A at 25°C, this MOSFET is ideal for demanding power electronics applications.

IRLZ24NPBF Features

• High Input Capacitance (Ciss): 480 pF @ 25 V, ensuring low gate drive power consumption.
• Low Gate Charge (Qg): 15 nC @ 5 V, reducing switching losses and improving efficiency.
• Robust Power Dissipation: 45W (Tc), suitable for high-power applications.
• Low Rds On: 60mOhm @ 11A, 10V, minimizing power losses in the on-state.
• Wide Vgs Range: ±16V, providing flexibility in gate drive voltage.
• Low Vgs(th): 2V @ 250µA, enabling easy switching.
• Through Hole Mounting: Facilitates easy integration into existing designs.
• HEXFET® Series: Known for high performance and reliability.
• Compliance: RoHS3 compliant, REACH unaffected, and moisture sensitivity level 1.

IRLZ24NPBF Applications

The IRLZ24NPBF is well-suited for a variety of applications where high power handling and efficient switching are required:

• Power Supplies: Its high voltage and current ratings make it ideal for power supply designs.
• Motor Controls: The low Rds On and high current capability are beneficial for motor control applications.
• Industrial Automation: Reliable operation in harsh environments due to its robust design and compliance with industry standards.

Conclusion of IRLZ24NPBF

The IRLZ24NPBF, with its combination of high voltage, current handling, and low on-state resistance, stands out as a superior choice for power electronics applications. Its compliance with industry standards and robust performance make it a reliable component for demanding environments. While it is marked as "Not For New Designs," it remains a valuable option for existing designs that require its specific performance characteristics.