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IRLZ24NS

IRLZ24NS Description

The IRLZ24NS from Infineon Technologies is an N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 55V drain-to-source voltage (Vdss) and 18A continuous drain current (Id), it delivers robust performance in demanding circuits. The device features a low on-resistance (Rds(on)) of 60mOhm at 10V gate drive, minimizing conduction losses. Packaged in a D2PAK (TO-263) surface-mount format, it offers excellent thermal dissipation, supporting up to 45W power dissipation (Tc). Though marked as obsolete, its specifications remain competitive for legacy designs requiring reliable switching solutions.

IRLZ24NS Features

• Low Gate Charge (Qg): 15nC at 5V ensures fast switching and reduced drive losses.
• High Input Capacitance (Ciss): 480pF at 25V balances switching speed with noise immunity.
• Wide Vgs Range: ±16V gate tolerance enhances flexibility in drive circuitry.
• Optimized Thermal Performance: 3.8W (Ta) to 45W (Tc) power dissipation suits high-current applications.
• Robust HEXFET® Technology: Delivers low Rds(on) and high avalanche energy capability.
• MSL 1 (Unlimited): Moisture-resistant packaging simplifies storage and handling.

IRLZ24NS Applications

• DC-DC Converters: Efficient power conversion in industrial and automotive systems.
• Motor Control: Drives brushed/brushless motors in robotics and automation.
• Power Management: Load switching in UPS, SMPS, and battery protection circuits.
• Legacy Designs: Replacement or repair in obsolete equipment due to its discontinued status.

Conclusion of IRLZ24NS

The IRLZ24NS excels in high-current, medium-voltage applications with its low Rds(on) and HEXFET® reliability. While no longer in production, its thermal performance and switching efficiency make it a viable choice for maintenance or cost-sensitive projects. Engineers should evaluate modern alternatives for new designs but can leverage this MOSFET’s proven performance in existing systems.