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IRLZ34NS

IRLZ34NS Description

The IRLZ34NS from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 55V drain-to-source voltage (Vdss) and continuous drain current (Id) of 30A (at Tc), it delivers robust performance in power management circuits. Packaged in a D2PAK (TO-263) surface-mount form factor, this MOSFET features a low on-resistance (Rds(on)) of 35mΩ at 16A, 10V, minimizing conduction losses. Though marked as obsolete, its specifications remain competitive for legacy designs requiring reliable power switching.

IRLZ34NS Features

• Low Gate Charge (Qg): 25nC at 5V ensures fast switching and reduced drive losses.
• High Power Handling: Supports 68W (Tc) power dissipation, ideal for thermally constrained environments.
• Optimized Drive Voltage: Operates efficiently at 4V–10V Vgs, compatible with logic-level and standard gate drivers.
• Low Threshold Voltage (Vgs(th)): 2V at 250µA enhances low-voltage operation.
• Low Input Capacitance (Ciss): 880pF at 25V minimizes switching delays.
• Robust Protection: ±16V Vgs(max) safeguards against gate overvoltage.

IRLZ34NS Applications

The IRLZ34NS excels in:

• DC-DC Converters: Leveraging low Rds(on) for high-efficiency voltage regulation.
• Motor Drives: Handling high current pulses in brushed/brushless systems.
• Power Supplies: Used in SMPS and linear regulators for industrial/consumer electronics.
• Automotive Systems: Suitable for auxiliary power controls (non-safety-critical).
• Battery Management: Efficient load switching in portable devices.

Conclusion of IRLZ34NS

Despite its obsolete status, the IRLZ34NS remains a viable choice for designers seeking a cost-effective, high-performance MOSFET with low conduction losses and fast switching. Its D2PAK package balances thermal performance and board space, while Infineon’s HEXFET® technology ensures reliability. Ideal for legacy upgrades or niche applications demanding 30A current handling and 55V breakdown voltage, it bridges the gap between efficiency and durability in power electronics.