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IRLZ44ZSTRLPBF

IRLZ44ZSTRLPBF Description

The IRLZ44ZSTRLPBF from Infineon Technologies is a high-performance N-channel HEXFET® power MOSFET designed for demanding switching applications. With a 55V drain-to-source voltage (Vdss) and 51A continuous drain current (Id), it delivers robust power handling in a compact D2PAK (TO-263) surface-mount package. This obsolete but still relevant MOSFET features low on-resistance (Rds(on)) of 13.5mOhm at 10V Vgs, ensuring minimal conduction losses and high efficiency. Its fast switching characteristics, supported by a gate charge (Qg) of 36nC at 5V, make it suitable for high-frequency applications.

IRLZ44ZSTRLPBF Features

• Low Rds(on): 13.5mOhm @ 31A, 10V reduces power dissipation and improves thermal performance.
• High Current Capability: 51A (Tc) continuous drain current for power-intensive designs.
• Optimized Gate Drive: Drive voltage range of 4.5V to 10V ensures compatibility with logic-level and standard gate drivers.
• Robust Construction: ±16V Vgs(max) and 80W power dissipation (Tc) enhance reliability in harsh environments.
• Industry-Standard Package: D2PAK (TO-263) offers superior thermal performance and mechanical durability.
• Compliance: ROHS3 and REACH unaffected, with ECCN EAR99 for global use.

IRLZ44ZSTRLPBF Applications

• Power Supplies: Efficient DC-DC converters, SMPS, and voltage regulators.
• Motor Control: H-bridge drivers and PWM motor controllers.
• Automotive Systems: Load switching, LED drivers, and battery management.
• Industrial Equipment: High-current switching in relays, solenoids, and inverters.
• Renewable Energy: Solar charge controllers and power inverters.

Conclusion of IRLZ44ZSTRLPBF

The IRLZ44ZSTRLPBF is a versatile, high-efficiency MOSFET ideal for applications requiring low conduction losses, high current handling, and fast switching. While marked obsolete, its proven HEXFET® technology and robust performance make it a reliable choice for legacy designs or replacements. Its D2PAK package ensures excellent thermal management, while low gate charge and wide drive voltage range simplify integration into diverse systems. Engineers seeking a cost-effective, high-performance solution for power electronics will find this MOSFET well-suited for demanding industrial, automotive, and energy applications.