Infineon Technologies_IRS21834SPBF
original

Infineon Technologies
IRS21834SPBF

730-IRS21834SPBF
PDF Datasheet
IC GATE DRVR HALF-BRIDGE 14SOIC
26 weeks

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ISO14001
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Tech Specifications

Maximum Turn-On Delay Time (ns)
35
PPAP
No
Gate Type
IGBT, N-Channel MOSFET
Product Status
Obsolete
Automotive
No
Special Features
Under Voltage Lockout
Supplier Package
SOIC N
Package / Case
14-SOIC (0.154", 3.90mm Width)
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IRS21834SPBF Description

IRS21834SPBF Description

The IRS21834SPBF is a high-performance gate driver IC designed for half-bridge configurations, manufactured by Infineon Technologies. This obsolete product offers a range of technical specifications that make it suitable for various applications in the electronics industry. The device features a supply voltage range of 10V to 20V and supports independent channel types, ensuring flexibility in circuit design. With a maximum high-side voltage of 600V (bootstrap), the IRS21834SPBF is capable of handling high-voltage applications with ease. The logic voltage levels are set at VIL 0.8V and VIH 2.5V, ensuring compatibility with a wide range of control signals. The device also boasts a peak output current of 1.9A (source) and 2.3A (sink), making it robust for driving power MOSFETs and IGBTs. The IRS21834SPBF is packaged in a surface-mount 14SOIC format, which is ideal for compact and efficient PCB layouts. Additionally, it complies with RoHS3 and is REACH unaffected, ensuring environmental compliance.

IRS21834SPBF Features

  • Supply Voltage Range: 10V to 20V, providing flexibility in power supply options.
  • Independent Channel Type: Allows for individual control of each channel, enhancing design versatility.
  • High-Side Voltage: Max 600V (bootstrap), suitable for high-voltage applications.
  • Logic Voltage Levels: VIL 0.8V and VIH 2.5V, ensuring compatibility with various control signals.
  • Peak Output Current: 1.9A (source) and 2.3A (sink), capable of driving high-power devices.
  • Rise/Fall Time: Typ 40ns/20ns, ensuring fast switching capabilities.
  • Environmental Compliance: RoHS3 compliant and REACH unaffected, meeting industry standards.
  • Moisture Sensitivity Level: MSL 2 (1 Year), suitable for storage and handling in standard conditions.
  • Packaging: Surface-mount 14SOIC, ideal for compact and efficient PCB designs.

IRS21834SPBF Applications

The IRS21834SPBF is ideal for applications requiring high-voltage gate driving in half-bridge configurations. Its robust design and high peak output current make it suitable for driving power MOSFETs and IGBTs in various power electronics applications. Specific use cases include:

  • Motor Control: Efficiently driving high-power MOSFETs or IGBTs in motor control circuits.
  • Power Supplies: Enhancing the performance of switching power supplies with fast switching capabilities.
  • Inverters: Driving high-voltage devices in solar inverters and other renewable energy applications.
  • Industrial Automation: Providing reliable gate driving for industrial control systems and power modules.

Conclusion of IRS21834SPBF

The IRS21834SPBF, despite being obsolete, remains a reliable choice for high-voltage gate driving applications. Its robust design, wide supply voltage range, and high peak output current make it suitable for driving power MOSFETs and IGBTs in various power electronics applications. The device's compliance with environmental standards and its compact surface-mount packaging further enhance its appeal. While newer alternatives may offer enhanced features, the IRS21834SPBF continues to provide a solid foundation for reliable and efficient gate driving in half-bridge configurations.

FAQ

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