Infineon Technologies_IRS2609DSPBF
Infineon Technologies_IRS2609DSPBF
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Infineon Technologies
IRS2609DSPBF

730-IRS2609DSPBF
PDF Datasheet
IC GATE DRVR HALF-BRIDGE 8SOIC

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Tech Specifications

Operating Temperature
-40°C ~ 150°C (TJ)
Input Type
Non-Inverting
Driven Configuration
Half-Bridge
Rise / Fall Time (Typ)
150ns, 50ns
ECCN
EAR99
Number of Drivers
2
Gate Type
IGBT, N-Channel MOSFET
Mounting Type
Surface Mount
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IRS2609DSPBF Description

IRS2609DSPBF Description

The2 IRS609DSPBF is a high-performance half-bridge gate driver IC designed by Infineon Technologies. This device is part of the Power Management (PMIC) category and is housed in an 8SOIC package. It is specifically engineered to drive power MOSFETs and IGBTs in various high-voltage applications. The IRS2609DSPBF features a synchronous channel type and supports a wide supply voltage range of 10V to 20V, making it versatile for different power supply requirements.

IRS2609DSPBF Features

  • High Side Voltage: The IRS2609DSPBF boasts a maximum high side voltage of 600V (bootstrap), enabling it to handle high-voltage applications with ease.
  • Current Capability: It provides a peak output current of 200mA for sourcing and 350mA for sinking, ensuring robust performance in demanding environments.
  • Rise and Fall Times: With typical rise and fall times of 150ns and 50ns respectively, the IRS2609DSPBF ensures fast and efficient switching, minimizing power loss and improving overall system efficiency.
  • Logic Compatibility: The logic voltage levels of VIL at 0.8V and VIH at 2.2V make it compatible with a wide range of control circuits, enhancing its versatility.
  • Mounting Type: The surface mount package type facilitates easy integration into compact and high-density PCB designs.
  • Regulatory Compliance: The IRS2609DSPBF is classified under ECCN EAR99 and is REACH unaffected, ensuring compliance with international regulatory standards.
  • Moisture Sensitivity: With a Moisture Sensitivity Level (MSL) of 2 (1 Year), it is suitable for use in environments with varying humidity levels.

IRS2609DSPBF Applications

The IRS2609DSPBF is ideal for applications requiring high-voltage driving gate, such as:

  • Power Supplies: Suitable for driving MOSFETs and IGBTs in switch-mode power supplies (SMPS) and DC-DC converters.
  • Motor Control: Ideal for driving high-voltage MOSFETs in motor control applications, ensuring efficient and reliable operation.
  • Renewable Energy Systems: Can be used in inverters and converters for solar and wind energy systems, contributing to efficient power conversion.
  • Industrial Automation: Applicable in various industrial automation equipment where high-voltage switching is required.

Conclusion of IRS2609DSPBF

The IRS2609DSPBF from Infineon Technologies stands out as a reliable and efficient half-bridge gate driver IC. Its high voltage capability, robust current handling, and fast switching times make it an excellent choice for a variety of high-voltage applications. Despite being marked as obsolete, the IRS2609DSPBF remains a valuable component for engineers and designers looking for a proven solution in power management. Its compatibility with a wide range of logic levels and regulatory compliance further enhance its appeal. For applications requiring high efficiency and reliability, the IRS2609DSPBF is a top contender.

FAQ

What voltage specification is listed for IRS2609DSPBF?
The listed voltage-related specification for IRS2609DSPBF is 10V ~ 20V.
What is IRS2609DSPBF?
What operating temperature range does IRS2609DSPBF support?
Is IRS2609DSPBF currently in stock?
What is the mounting type of IRS2609DSPBF?
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