Infineon Technologies_ISS55EP06LMXTSA1
original

Infineon Technologies
ISS55EP06LMXTSA1

278-ISS55EP06LMXTSA1
PDF Datasheet
MOSFET P-CH 60V 180MA SOT23-3
22 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
4.9
Input Capacitance (Ciss) (Max) @ Vds
18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
0.59 nC @ 10 V
Typical Rise Time (ns)
1.4
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
1
Show More

ISS55EP06LMXTSA1 Description

ISS55EP06LMXTSA1 Description

The ISS55EP06LMXTSA1 is a high-performance P-Channel MOSFET from Infineon Technologies, designed for a wide range of applications in the electronics industry. This device is part of the OptiMOS™ series, known for its excellent performance and reliability. With a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 180mA at 25°C, the ISS55EP06LMXTSA1 is suitable for various power management and switching applications.

ISS55EP06LMXTSA1 Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power consumption.
  • Input Capacitance (Ciss): 18 pF @ 30V - Ensures fast switching and minimal power loss.
  • Gate Charge (Qg): 0.59 nC @ 10V - Minimizes gate charge, reducing power consumption.
  • Rds On: 5.5 Ohm @ 180mA, 10V - Offers low on-resistance for efficient power management.
  • Vgs(th): 2V @ 11µA - Provides a low threshold voltage for easy switching.
  • Mounting Type: Surface Mount - Facilitates easy integration into printed circuit boards (PCBs).
  • Package: Tape & Reel (TR) - Ideal for automated assembly processes.

ISS55EP06LMXTSA1 Applications

The ISS55EP06LMXTSA1 is ideal for various applications where high efficiency, low power consumption, and reliable performance are critical. Some specific use cases include:

  1. Power Management: In battery-powered devices, the ISS55EP06LMXTSA1 can help manage power efficiently, extending battery life.
  2. Switching Applications: Due to its low on-resistance and fast switching capabilities, it is suitable for high-frequency switching applications.
  3. Automotive Electronics: The device's robustness and reliability make it suitable for automotive electronics, such as power windows and seat controls.

Conclusion of ISS55EP06LMXTSA1

The ISS55EP06LMXTSA1 is a versatile and high-performance P-Channel MOSFET from Infineon Technologies. Its unique features, such as low on-resistance, fast switching, and low power consumption, make it an excellent choice for a wide range of applications in the electronics industry. With its OptiMOS™ technology, the ISS55EP06LMXTSA1 offers superior performance and reliability, making it a top choice for power management and switching applications.

FAQ

What is ISS55EP06LMXTSA1?
ISS55EP06LMXTSA1 is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
Does ISS55EP06LMXTSA1 have quantity-based pricing?
Is ISS55EP06LMXTSA1 currently in stock?
What voltage specification is listed for ISS55EP06LMXTSA1?
What package or case is ISS55EP06LMXTSA1 available in?
Availability (In Stock : 1224 )
Quantity Unit Price Ext. Price
5+ $0.07920 $0.40
50+ $0.06220 $3.11
150+ $0.05371 $8.06
500+ $0.04733 $23.66
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ