Infineon Technologies_S29GL512S11FHI010

Infineon Technologies
S29GL512S11FHI010  
Memory ICs Products

S29GL512S11FHI010
774-S29GL512S11FHI010
Ersa
Infineon Technologies-S29GL512S11FHI010-datasheets-3315528.pdf
IC FLASH 512MBIT PARALLEL 64FBGA
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S29GL512S11FHI010 Description

S29GL512S11FHI010 Description

The S29GL512S11FHI010 is a high-performance flash memory IC designed by Cypress Semiconductor Corp, a leading manufacturer of advanced semiconductor solutions. This device is part of the Memory ICs Products category and is housed in a 64FBGA package, making it ideal for surface mount applications. The S29GL512S11FHI010 features a parallel memory interface and is organized as 32M x 16, providing a total memory size of 512 Mbit. It operates within a supply voltage range of 2.7V to 3.6V and offers an access time of 110 ns, with a write cycle time of 60 ns for both word and page operations. This memory IC is RoHS3 compliant, ensuring it meets the latest environmental standards. While it is not recommended for new designs, the S29GL512S11FHI010 remains a robust solution for existing systems that require reliable flash memory.

S29GL512S11FHI010 Features

  • Memory Organization: The S29GL512S11FHI010 is organized as 32M x 16, providing a total memory size of 512 Mbit. This configuration ensures efficient data storage and retrieval, making it suitable for applications requiring large amounts of non-volatile memory.
  • Access Time: With an access time of 110 ns, the S29GL512S11FHI010 ensures rapid data retrieval, crucial for high-speed applications.
  • Write Cycle Time: The device offers a write cycle time of 60 ns for both word and page operations, enabling quick data updates and modifications.
  • Voltage Range: Operating within a supply voltage range of 2.7V to 3.6V, the S29GL512S11FHI010 ensures compatibility with a wide range of power supplies.
  • Parallel Interface: The parallel memory interface facilitates straightforward integration with existing systems, ensuring seamless communication between the memory IC and the host processor.
  • Surface Mount: The surface mount mounting type allows for compact and reliable PCB designs, making it ideal for space-constrained applications.
  • RoHS3 Compliance: The S29GL512S11FHI010 is RoHS3 compliant, ensuring it meets stringent environmental standards and is suitable for use in environmentally conscious designs.

S29GL512S11FHI010 Applications

The S29GL512S11FHI010 is well-suited for a variety of applications that require high-speed, non-volatile memory. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems that require reliable storage and quick data access, such as industrial control systems, automotive electronics, and IoT devices.
  • Networking Equipment: Suitable for networking equipment where fast data retrieval and storage are critical, such as routers, switches, and network interface cards.
  • Consumer Electronics: Can be used in consumer electronics like digital cameras, set-top boxes, and smart TVs, where non-volatile memory is essential for storing firmware and user data.
  • Medical Devices: Applicable in medical devices that require robust and reliable memory solutions, such as diagnostic equipment and wearable health monitors.

Conclusion of S29GL512S11FHI010

The S29GL512S11FHI010 is a high-performance flash memory IC that offers a combination of speed, reliability, and environmental compliance. Its 512 Mbit memory size, organized as 32M x 16, ensures ample storage capacity for a wide range of applications. With an access time of 110 ns and a write cycle time of 60 ns, the S29GL512S11FHI010 provides rapid data retrieval and modification capabilities, making it ideal for high-speed applications. The device's parallel interface and surface mount packaging facilitate easy integration into existing systems, while its RoHS3 compliance ensures it meets the latest environmental standards. Although not recommended for new designs, the S29GL512S11FHI010 remains a reliable choice for existing systems that require a robust flash memory solution.

Tech Specifications

Program Current (mA)
Programming Voltage (V)
PPAP
Operating Current (mA)
Memory Type
Product Status
Automotive
Supplier Package
Chip Density (bit)
Package / Case
Timing Type
Technology
Voltage - Supply
REACH Status
Maximum Operating Supply Voltage (V)
EU RoHS
Sector Size
Moisture Sensitivity Level (MSL)
Operating Temperature
Number of Words
Memory Interface
Architecture
Block Organization
OE Access Time (ns)
Minimum Endurance (Cycles)
ECCN
Memory Organization
Supplier Temperature Grade
Mounting Type
Standard Package Name
Cell Type
Pin Count
Mounting
Memory Size
Max. Access Time (ns)
Lead Shape
Typical Operating Supply Voltage (V)
HTSUS
Package
Programmability
Page Read Current (mA)
PCB changed
HTS
ECCN (US)
Supplier Device Package
Maximum Page Access Time (ns)
Command Compatible
Address Bus Width (bit)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Access Time
Process Technology
Package Height
Mfr
Maximum Programming Time (ms)
Memory Format
Interface Type
RoHS Status
Boot Block
Number of Bits/Word (bit)
ECC Support
Location of Boot Block
Support of Page Mode
Page Size
Package Length
Series
Write Cycle Time - Word, Page
Part Status
Package Width
Maximum Erase Time (S)
Base Product Number
Minimum Operating Supply Voltage (V)
Mounting Style
Speed
Unit Weight
Organization
Data Bus Width
Standard
RoHS
Supply Voltage - Min
Minimum Operating Temperature
Active Read Current - Max
Tradename
Moisture Sensitive
Maximum Operating Temperature
Supply Voltage - Max
USHTS

S29GL512S11FHI010 Documents

Download datasheets and manufacturer documentation for S29GL512S11FHI010

Ersa S29GL01GS, 512S, 256S, 128S      
Ersa Date Code/Shelf Life Chgs 18/Jul/2019       Ship Label REV      
Ersa Mult Device Serial No Mark 26/Sep/2017       Die Epoxy Chg 05/Nov/2015      
Ersa RoHS Certificate      

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