Infineon Technologies_S80KS2562GABHI023
Infineon Technologies_S80KS2562GABHI023
original

Infineon Technologies
S80KS2562GABHI023

774-S80KS2562GABHI023
PDF Datasheet
IC PSRAM 256MBIT HYPERBUS 24FBGA
8 Weeks

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ISO9001
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Original

Tech Specifications

EU RoHS
Compliant
ECCN (US)
3A991.b.2
Part Status
Active
HTS
8542.32.00.24
Automotive
No
PPAP
No
Chip Density (bit)
256M
Number of Words
32M
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S80KS2562GABHI023 Description

S80KS2562GABHI023 Description

The S80KS2562GABHI023 is a high-performance PSRAM (Pseudo SRAM) memory IC from Infineon Technologies, designed to offer exceptional speed and efficiency in memory operations. This IC features a 256 Mbit memory size organized as 32M x 8, providing ample storage capacity for demanding applications. It operates at a clock frequency of 200 MHz, ensuring rapid data processing and retrieval. The memory interface is based on the advanced HyperBus technology, which supports high-speed data transfer and low latency, making it ideal for applications requiring quick access to large data sets.

S80KS2562GABHI023 Features

  • High-Speed Performance: With an access time of 35 ns and a write cycle time of 35 ns, the S80KS2562GABHI023 ensures fast read and write operations, crucial for real-time data processing.
  • Advanced Memory Interface: The HyperBus interface provides a high-speed, low-latency connection, enhancing overall system performance.
  • Volatile Memory Type: As a PSRAM, it offers the benefits of SRAM with the density of DRAM, providing a balance between speed and storage capacity.
  • Wide Supply Voltage Range: The IC operates within a voltage range of 1.7V to 2V, offering flexibility in power supply design.
  • Surface Mount Technology: The S80KS2562GABHI023 is available in a 24FBGA package, making it suitable for surface mount applications and compact designs.
  • Compliance and Reliability: The product is REACH unaffected and RoHS3 compliant, ensuring environmental safety and reliability. It also has a moisture sensitivity level (MSL) of 3, allowing for 168 hours of exposure before assembly.
  • Active Product Status: This indicates that the IC is currently in production and readily available for integration into new designs.

S80KS2562GABHI023 Applications

The S80KS2562GABHI023 is ideal for a variety of applications where high-speed, high-density memory is required. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems that require fast access to memory, such as automotive infotainment systems, industrial control units, and IoT devices.
  • Consumer Electronics: Suitable for consumer electronics like smartphones, tablets, and gaming consoles where quick data retrieval and processing are essential.
  • Telecommunications: Can be used in telecom equipment for buffering and processing large amounts of data quickly.
  • Medical Devices: Useful in medical imaging and diagnostic equipment where rapid data processing is critical for real-time analysis.

Conclusion of S80KS2562GABHI023

The S80KS2562GABHI023 from Infineon Technologies stands out as a robust and efficient PSRAM memory IC, offering a unique blend of high-speed performance, advanced memory interface, and compliance with industry standards. Its 256 Mbit capacity and 200 MHz clock frequency make it a powerful solution for applications requiring rapid data handling. The HyperBus interface ensures low latency and high-speed data transfer, while the PSRAM technology provides a balance between speed and storage density. With its wide supply voltage range, surface mount compatibility, and compliance with environmental standards, the S80KS2562GABHI023 is a versatile and reliable choice for modern electronic designs.

FAQ

What voltage specification is listed for S80KS2562GABHI023?
The listed voltage-related specification for S80KS2562GABHI023 is 1.7.
Does S80KS2562GABHI023 have quantity-based pricing?
What is S80KS2562GABHI023?
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