Infineon Technologies_SPB80P06P
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Infineon Technologies
SPB80P06P

278-SPB80P06P
PDF Datasheet
MOSFET P-CH 60V 80A TO263-3

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Tech Specifications

FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
5033 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
173 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
PG-TO263-3-2
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
340W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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SPB80P06P Description

SPB80P06P Description

The SPB80P06P from Infineon Technologies is a high-performance P-channel power MOSFET designed for demanding switching applications. With a 60V drain-to-source voltage (Vdss) and 80A continuous drain current (Id), it delivers robust power handling in a compact TO-263-3 (D²PAK) surface-mount package. This MOSFET is part of Infineon’s SIPMOS® series, leveraging advanced Metal Oxide (MOSFET) technology to achieve low conduction losses and high efficiency. Though marked as obsolete, its specifications remain competitive for legacy designs or replacements. Key metrics include a low on-resistance (Rds(on)) of 23mΩ at 10V gate drive and a max gate charge (Qg) of 173nC, ensuring fast switching and reduced heat dissipation.

SPB80P06P Features

  • High Current Capacity: Supports 80A (Tc) continuous current, ideal for high-power circuits.
  • Low Rds(on): 23mΩ @ 64A, 10V minimizes conduction losses, improving efficiency.
  • Optimized Gate Charge: 173nC @ 10V balances switching speed and drive requirements.
  • Robust Voltage Ratings: ±20V max Vgs and 60V Vdss ensure reliability in varied conditions.
  • Thermal Performance: 340W (Tc) power dissipation capability with proper heatsinking.
  • Surface-Mount Design: TO-263-3 package suits automated assembly and space-constrained layouts.
  • Compliance: REACH unaffected, MSL 1 (unlimited shelf life), and EAR99/ECCN for global use.

SPB80P06P Applications

The SPB80P06P excels in:

  • Power Supplies: High-efficiency DC-DC converters and SMPS due to low Rds(on).
  • Motor Control: H-bridge configurations in industrial drives or automotive systems.
  • Battery Management: Reverse polarity protection or load switching in 48V Li-ion systems.
  • Industrial Switching: Solenoid/relay drivers, where fast switching and high current are critical.
  • Legacy Upgrades: Replacement for older P-channel MOSFETs in telecom or server power stages.

Conclusion of SPB80P06P

The SPB80P06P combines high current handling, low resistance, and fast switching in a rugged package, making it a strong choice for power electronics designers. While obsolete, its 340W dissipation and 80A rating ensure relevance in high-reliability applications. Ideal for motor drives, power conversion, and industrial systems, it balances performance with ease of integration. Engineers should evaluate alternatives for new designs but may leverage this MOSFET for repairs or backward compatibility.

FAQ

What operating temperature range does SPB80P06P support?
SPB80P06P has an operating temperature range of -55°C ~ 175°C (TJ).
Is SPB80P06P currently in stock?
What package or case is SPB80P06P available in?
What is the mounting type of SPB80P06P?
Are there related or alternative parts for SPB80P06P?
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