Infineon Technologies_SPD07N60C3BTMA1
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Infineon Technologies
SPD07N60C3BTMA1

278-SPD07N60C3BTMA1
PDF Datasheet
MOSFET N-CH 650V 7.3A TO252-3

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
PG-TO252-3-11
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
83W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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SPD07N60C3BTMA1 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SPD07N60C3BTMA1 belongs to can be classified under the Discrete Semiconductors. SPD07N60C3BTMA1 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SPD07N60C3BTMA1 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

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SPD07N60C3BTMA1 is currently available on an inquiry basis. Please contact us for the latest stock information.
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