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SPD15N06S2L-64
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SPD15N06S2L-64 Description
SPD15N06S2L-64 Description
The SPD15N06S2L-64 from Infineon Technologies is an N-channel MOSFET designed for high-efficiency power switching applications. Part of the OptiMOS™ series, it features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 19A (Tc), making it suitable for medium-power applications. With an ultra-low on-resistance (Rds(on)) of 64mΩ at 10V gate drive, this MOSFET minimizes conduction losses, enhancing thermal performance and energy efficiency. The device is housed in a TO-252-3 (DPAK) package, optimized for surface-mount assembly and compatible with automated PCB production.
SPD15N06S2L-64 Features
- Low Rds(on): 64mΩ @ 8A, 10V ensures reduced power dissipation.
- High Current Handling: 19A continuous drain current (Tc) for robust performance.
- Fast Switching: Low gate charge (13nC @ 10V) and input capacitance (445pF @ 25V) enable high-frequency operation.
- Wide Vgs Range: ±20V gate-source voltage tolerance for flexible drive requirements.
- Thermal Efficiency: 47W max power dissipation (Tc) ensures reliability under load.
- Industry-Standard Package: TO-252-3 (DPAK) for easy integration.
- REACH & ECCN Compliance: Environmentally friendly and export-friendly (EAR99).
SPD15N06S2L-64 Applications
Ideal for DC-DC converters, motor control, and power management systems, this MOSFET excels in:
- Switched-Mode Power Supplies (SMPS): Low Rds(on) improves efficiency in buck/boost topologies.
- Automotive Electronics: High Vdss and current rating suit 12V/24V systems.
- Battery Protection Circuits: Fast switching minimizes energy loss in discharge paths.
- Industrial Load Switches: Robust thermal performance for prolonged operation.
Conclusion of SPD15N06S2L-64
The SPD15N06S2L-64 combines Infineon’s OptiMOS™ technology with a balance of low resistance, high current capability, and compact packaging. While marked as obsolete, its performance remains competitive for legacy designs or replacements. Engineers will appreciate its efficiency in high-frequency switching and thermal-critical applications, though newer alternatives should be evaluated for forward-looking projects. A reliable choice for power electronics requiring a cost-effective, high-performance MOSFET.



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