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71V25761S200BG

71V25761S200BG Description

The 71V25761S200BG is a high-performance SRAM (Static Random Access Memory) IC designed by Integrated Device Technology (IDT). This memory IC features a clock frequency of 200 MHz, providing rapid data access with an access time of just 3.1 ns. The memory is organized as 128K x 36, offering a total memory size of 4.5 Mbit. The device operates within a supply voltage range of 3.135V to 3.465V and is suitable for applications within an operating temperature range of 0°C to 70°C (TA). The memory is volatile, meaning it requires power to retain data, and it uses a parallel memory interface for efficient data transfer. The 71V25761S200BG is packaged in a surface-mount 119-pin BGA (Ball Grid Array) format, making it ideal for compact and high-density PCB designs. The product is REACH affected and falls under the HTSUS code 8542.32.0041, with an ECCN classification of 3A991B2A. The moisture sensitivity level (MSL) is rated at level 3, allowing for a 168-hour exposure before assembly. This IC is part of the active product line from IDT and is not verified for DigiKey programmability.

71V25761S200BG Features

• High-Speed Performance: With a clock frequency of 200 MHz and an access time of 3.1 ns, the 71V25761S200BG ensures rapid data retrieval and processing, making it suitable for high-speed applications.
• Volatile Memory: The SRAM memory type ensures that data is retained as long as power is supplied, providing reliable and fast access to frequently used data.
• Parallel Interface: The parallel memory interface allows for efficient data transfer, which is crucial for applications requiring high data throughput.
• Compact and Durable Packaging: The 119PBGA surface-mount package is ideal for space-constrained designs and ensures robustness in various operating conditions.
• Wide Operating Temperature Range: The device operates reliably within a temperature range of 0°C to 70°C (TA), making it suitable for a variety of industrial and consumer applications.
• Moisture Sensitivity Level (MSL) 3: The MSL rating of 3 allows for a 168-hour exposure before assembly, providing flexibility in manufacturing processes.
• Active Product Status: As an active product from IDT, the 71V25761S200BG benefits from ongoing support and availability, ensuring long-term reliability for product development and maintenance.

71V25761S200BG Applications

The 71V25761S200BG is ideal for applications that require high-speed, volatile memory solutions with efficient data transfer. Some specific use cases include:

• Networking Equipment: High-speed routers and switches can benefit from the rapid data access capabilities of this SRAM IC, ensuring efficient packet processing and reduced latency.
• Industrial Control Systems: The robustness and reliability of the 71V25761S200BG make it suitable for industrial control systems where real-time data processing is critical.
• Consumer Electronics: Devices such as gaming consoles and high-end multimedia systems can leverage the fast access times and large memory capacity for seamless performance.
• Telecommunications: Base stations and other telecommunication equipment can utilize this IC for fast data buffering and processing, enhancing overall system performance.
• Automotive Systems: In-vehicle infotainment systems and advanced driver-assistance systems (ADAS) can benefit from the high-speed memory capabilities, ensuring quick response times and reliable operation.

Conclusion of 71V25761S200BG

The 71V25761S200BG from IDT is a high-performance SRAM IC that offers significant advantages over similar models in the market. Its high-speed operation, compact and durable packaging, and wide operating temperature range make it a versatile and reliable choice for a variety of applications. The parallel memory interface and volatile memory type ensure efficient data transfer and fast access times, crucial for high-speed processing. Whether used in networking equipment, industrial control systems, or consumer electronics, the 71V25761S200BG provides the performance and reliability needed to meet the demands of modern electronic systems.