Integrated Silicon Solution, Inc. (ISSI)_IS43LQ16128A-062TBLI-TR
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Integrated Silicon Solution, Inc. (ISSI)
IS43LQ16128A-062TBLI-TR

774-IS43LQ16128A-062TBLI-TR
PDF Datasheet
2G, 1.06-1.17/1.70-1.95V, LPDDR4
8 Weeks

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ISO9001
Quality Policy
ISO45001
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Tech Specifications

EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8542.32.00.36
DRAM Type
DRAM
Chip Density (bit)
2G
Number of Bits/Word (bit)
16
Maximum Clock Rate (MHz)
3200
Supplier Temperature Grade
Industrial
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IS43LQ16128A-062TBLI-TR Description

IS43LQ16128A-062TBLI-TR Description

The IS43LQ16128A-062TBLI-TR is a high-performance 2Gbit LPDDR4 DRAM memory IC chip designed by Integrated Silicon Solution, Inc. (ISSI). This memory IC is optimized for low-power applications and offers a robust combination of speed and efficiency. With a clock frequency of 1.6 GHz and an access time of 3.5 ns, it provides rapid data retrieval and processing capabilities. The memory is organized as 128M x 16, ensuring efficient data management and high-density storage.

IS43LQ16128A-062TBLI-TR Features

  • Low Power Consumption: The IS43LQ16128A-062TBLI-TR operates within a voltage range of 1.06V to 1.17V and 1.7V to 1.95V, making it suitable for devices that require minimal power usage, such as mobile devices and IoT applications.
  • High-Speed Performance: With a clock frequency of 1.6 GHz and an access time of 3.5 ns, this DRAM ensures quick data access and processing, enhancing overall system performance.
  • Memory Organization: The 128M x 16 organization allows for efficient memory management and high-density storage, making it ideal for applications requiring large amounts of data.
  • Write Cycle Time: The write cycle time of 18 ns ensures fast data writing capabilities, contributing to the overall efficiency of the memory.
  • Surface Mount Technology: The surface mount mounting type allows for compact and reliable integration into modern electronic devices.
  • Compliance and Reliability: The IS43LQ16128A-062TBLI-TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards. The moisture sensitivity level (MSL) of 3 (168 hours) ensures reliability in various environmental conditions.
  • Packaging: The product is available in a tape & reel (TR) package, facilitating easy handling and integration into automated manufacturing processes.

IS43LQ16128A-062TBLI-TR Applications

The IS43LQ16128A-062TBLI-TR is ideal for a wide range of applications that demand high-speed, low-power memory solutions. Its unique features make it particularly suitable for:

  • Mobile Devices: The low power consumption and high-speed performance make it an excellent choice for smartphones, tablets, and other mobile devices where battery life and data processing speed are critical.
  • IoT Devices: The compact size and low power requirements are well-suited for Internet of Things (IoT) devices that require efficient memory management and minimal power usage.
  • Embedded Systems: The surface mount technology and robust performance make it ideal for embedded systems in various industries, including automotive, industrial automation, and consumer electronics.
  • High-Performance Computing: The fast access time and write cycle time ensure efficient data handling, making it suitable for high-performance computing applications.

Conclusion of IS43LQ16128A-062TBLI-TR

The IS43LQ16128A-062TBLI-TR from ISSI is a versatile and high-performance LPDDR4 DRAM memory IC chip that offers significant advantages over similar models. Its low power consumption, high-speed performance, and robust compliance make it an ideal choice for a variety of applications, from mobile devices to high-performance computing. The compact surface mount design and reliable packaging ensure easy integration and durability, making it a standout option in the electronics industry.

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