Integrated Silicon Solution, Inc. (ISSI)_IS43R83200D-6TLI-TR
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Integrated Silicon Solution, Inc. (ISSI)
IS43R83200D-6TLI-TR

774-IS43R83200D-6TLI-TR
PDF Datasheet
IC DRAM 256MBIT PAR 66TSOP II

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Tech Specifications

Clock Frequency
166 MHz
Memory Type
Volatile
Product Status
Not For New Designs
Supplier Device Package
66-TSOP II
Access Time
700 ps
Package / Case
66-TSSOP (0.400", 10.16mm Width)
Technology
SDRAM - DDR
Voltage - Supply
2.3V ~ 2.7V
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IS43R83200D-6TLI-TR Description

IS43R83200D-6TLI-TR Description

The IS43R83200D-6TLI-TR is a high-performance 256Mbit DRAM memory IC chip manufactured by Integrated Silicon Solution, Inc. (ISSI). This memory chip features a parallel memory interface and is organized in a 32M x 8 configuration, providing robust and efficient data storage solutions. With a clock frequency of 166 MHz and an access time of 700 picoseconds, it offers rapid data retrieval capabilities essential for high-speed applications. The IS43R83200D-6TLI-TR operates within a supply voltage range of 2.3V to 2.7V, ensuring compatibility with a variety of power supply configurations.

IS43R83200D-6TLI-TR Features

  • High-Speed Performance: The IS43R83200D-6TLI-TR boasts a clock frequency of 166 MHz and an access time of 700 picoseconds, enabling quick data access and transfer, crucial for applications requiring real-time processing.
  • Volatile Memory: As a DRAM (Dynamic Random Access Memory) device, it provides volatile memory storage, which is ideal for temporary data storage and high-speed buffering.
  • Low Power Consumption: With a supply voltage range of 2.3V to 2.7V, this memory chip is designed to operate efficiently, minimizing power consumption and heat generation.
  • Surface Mount Technology: The IS43R83200D-6TLI-TR is available in a surface mount package, making it suitable for compact and high-density PCB designs.
  • Moisture Sensitivity Level (MSL) 3: This indicates that the component can be exposed to moisture for up to 168 hours without degradation, enhancing its reliability in various environmental conditions.
  • Compliance and Safety: The IS43R83200D-6TLI-TR is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and safety standards.
  • Write Cycle Time: With a write cycle time of 15ns, it ensures efficient data writing operations, further enhancing its performance in data-intensive applications.

IS43R83200D-6TLI-TR Applications

The IS43R83200D-6TLI-TR is ideal for a range of applications where high-speed data processing and temporary storage are required. It is particularly suited for:

  • Networking Equipment: Routers, switches, and other networking devices that require fast data buffering and retrieval.
  • Telecommunications: Base stations and other telecom infrastructure that need efficient memory solutions to handle large volumes of data.
  • Consumer Electronics: High-performance gaming consoles, digital cameras, and other devices that benefit from rapid data access.
  • Industrial Control Systems: Automation systems and industrial computers that require reliable and fast memory for real-time data processing.

Conclusion of IS43R83200D-6TLI-TR

The IS43R83200D-6TLI-TR is a versatile and high-performance DRAM memory IC chip that offers significant advantages over similar models. Its combination of high clock frequency, low access time, and efficient power consumption makes it an ideal choice for applications requiring rapid data processing and temporary storage. Despite its "Not For New Designs" status, the IS43R83200D-6TLI-TR remains a reliable and efficient memory solution for existing systems and applications.

FAQ

What voltage specification is listed for IS43R83200D-6TLI-TR?
The listed voltage-related specification for IS43R83200D-6TLI-TR is 2.3V ~ 2.7V.
What is IS43R83200D-6TLI-TR?
Does IS43R83200D-6TLI-TR have quantity-based pricing?
What package or case is IS43R83200D-6TLI-TR available in?
What operating temperature range does IS43R83200D-6TLI-TR support?
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