Integrated Silicon Solution, Inc. (ISSI)_IS61DDB21M36C-300M3L
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Integrated Silicon Solution, Inc. (ISSI)
IS61DDB21M36C-300M3L

774-IS61DDB21M36C-300M3L
PDF Datasheet
IC SRAM 36MBIT PARALLEL 165LFBGA

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Tech Specifications

Clock Frequency
300 MHz
Memory Type
Volatile
Product Status
Active
Supplier Device Package
165-LFBGA (13x15)
Access Time
8.4 ns
Package / Case
165-LBGA
Technology
SRAM - Synchronous, DDR II
Voltage - Supply
1.71V ~ 1.89V
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IS61DDB21M36C-300M3L Description

IS61DDB21M36C-300M3L Description

The IS61DDB21M36C-300M3L is a high-performance, volatile memory IC designed by Integrated Silicon Solution, Inc. (ISSI). This 36Mbit SRAM device features a parallel memory interface and is organized as 1M x 36, making it ideal for applications requiring large data storage and fast access times. The memory operates at a clock frequency of 300 MHz, ensuring rapid data retrieval and processing capabilities. With an access time of 8.4 ns, this IC delivers exceptional performance, making it suitable for high-speed applications.

The IS61DDB21M36C-300M3L is housed in a surface-mount package, specifically a 165LFBGA, which is ideal for compact and space-constrained designs. The device operates within a supply voltage range of 1.71V to 1.89V, ensuring compatibility with modern low-power systems. It is designed for an operating temperature range of 0°C to 70°C (TA), making it suitable for a wide range of environmental conditions.

IS61DDB21M36C-300M3L Features

  • High-Speed Performance: With a clock frequency of 300 MHz and an access time of 8.4 ns, the IS61DDB21M36C-300M3L ensures rapid data access and processing, making it ideal for high-speed applications.
  • Volatile Memory: As a volatile SRAM device, it provides fast read and write capabilities, essential for applications requiring frequent data updates.
  • Parallel Interface: The parallel memory interface allows for efficient data transfer and integration with existing systems.
  • Low-Power Operation: Operating within a supply voltage range of 1.71V to 1.89V, this IC is suitable for low-power applications, reducing overall power consumption.
  • Wide Operating Temperature Range: With an operating temperature range of 0°C to 70°C (TA), the IS61DDB21M36C-300M3L can be deployed in various environmental conditions.
  • Compliance and Safety: The device is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards.
  • Moisture Sensitivity Level: MSL 3 (168 Hours) ensures the IC is protected from moisture during storage and handling.

IS61DDB21M36C-300M3L Applications

The IS61DDB21M36C-300M3L is well-suited for a variety of applications that require high-speed, low-power, and reliable memory solutions. Some specific use cases include:

  • Telecommunications: Ideal for high-speed data processing and storage in communication systems.
  • Networking: Suitable for routers, switches, and other networking equipment where fast data access is crucial.
  • Consumer Electronics: Applicable in devices such as gaming consoles, high-end smartphones, and multimedia devices that require rapid data retrieval.
  • Industrial Automation: Useful in control systems and automation equipment where reliability and speed are paramount.
  • Medical Devices: Appropriate for medical imaging and diagnostic equipment that require fast and accurate data processing.

Conclusion of IS61DDB21M36C-300M3L

The IS61DDB21M36C-300M3L is a versatile and high-performance SRAM IC that offers significant advantages over similar models. Its combination of high-speed operation, low-power consumption, and wide operating temperature range make it an ideal choice for a variety of applications. The device's compliance with environmental and safety standards further enhances its suitability for modern electronics. Whether used in telecommunications, networking, consumer electronics, industrial automation, or medical devices, the IS61DDB21M36C-300M3L provides reliable and efficient memory solutions.

FAQ

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